4717E Search Results
4717E Price and Stock
Vishay Semiconductors MMSZ4717-E3-08DIODE ZENER 43V 500MW SOD123 |
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MMSZ4717-E3-08 | Digi-Reel | 9,760 | 1 |
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Maxim Integrated Products MAX4717EUB-TIC SWITCH SPDT X 2 4.5OHM 10UMAX |
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MAX4717EUB-T | Cut Tape | 1,555 | 1 |
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Maxim Integrated Products MAX4717ETB-TIC SW SPDT-NO/NCX2 3OHM 10TDFN |
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MAX4717ETB-T | Cut Tape | 1,280 | 1 |
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Maxim Integrated Products MAX4717EUB-IC SWITCH SPDT X 2 4.5OHM 10UMAX |
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MAX4717EUB- | Tube | 708 | 1 |
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TE Connectivity 154717-ESMC F VERT B 12POS SMT 9.00MM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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154717-E | Digi-Reel | 412 | 1 |
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154717-E | Tape & Reel | 560 | 20 Weeks | 280 |
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154717-E | 681 |
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154717-E | Cut Tape | 236 | 1 |
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154717-E | 1 |
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154717-E |
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154717-E | 17 Weeks | 280 |
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154717-E | 17 Weeks, 4 Days | 280 |
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154717-E | 1,541 |
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4717E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NLAS4717EPMTR2G
Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
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NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G | |
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Contextual Info: 4717EP 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/ z Voltage Operation: 1.8V to 5.5V double-throw SPDT CMOS analog switch designed to z On-Resistance: 4.5Ω (TYP) at 5.0V |
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SGM4717EP 300MHz SGM4717EP 300MHz 300MHz) -57dB 10MHz -99dB | |
MAX4717
Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
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NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA | |
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Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
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NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 | |
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Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
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NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 | |
MAX4717
Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
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NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP | |
4717EP
Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
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NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G | |
SGM4717EPContextual Info: 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch 4717EP GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/double -throw SPDT CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. It features high-bandwidth (300MHz) and low ON-resistance (4.5Ω |
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300MHz SGM4717EP SGM4717EP 300MHz) | |
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Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
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NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D | |
4717EPContextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
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NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D |