4717E Search Results

NLAS4717EPMTR2G

Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

Contextual Info: 4717EP 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/ z Voltage Operation: 1.8V to 5.5V double-throw SPDT CMOS analog switch designed to z On-Resistance: 4.5Ω (TYP) at 5.0V

MAX4717

Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

MAX4717

Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

4717EP

Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

SGM4717EP

Contextual Info: 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch 4717EP GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/double -throw SPDT CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. It features high-bandwidth (300MHz) and low ON-resistance (4.5Ω

Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

4717EP

Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.