47NS Search Results

Contextual Info: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

G30N60

Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710
Contextual Info: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGA30N60C3

Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3
Contextual Info: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGP30N60C3D4

Abstract: IXGA30N60C3D4 g30N60
Contextual Info: IXGA30N60C3D4 IXGP30N60C3D4 GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

ixgh30n60c3d1

Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGA30N60C3C1

Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Contextual Info: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

g30n60

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

IXGH30N60C3D1

Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ

Contextual Info: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

30N60C3

Abstract: g30n60c3 G30N60 igbt g30n60c3 IXGA30N60C3D4 IXGP30N60C3D4
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT With Diode IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE sat ≤ tfi(typ) = High Speed PT IGBTs for 40-100kHz switching 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

G30N60

Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
Contextual Info: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions

2B0365

Abstract: 74ls244 latch ic Z8127 z80 multibus Am286
Contextual Info: Am8163/Am8167 A m 816 3 /A m 816 7 Dynamic Memory Timing, Refresh and EDC Controllers DISTINCTIVE CHARACTERISTICS • Complete CPU to dynamic RAM control interface • R A S /M S E L/C A S Sequencer to eliminate delay lines • Complete EDC/data path controls for W ord/Byte read

Contextual Info: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI

7.3*4.3*2.8mm

Abstract: VJ1206A102 VJ1206A102k LM2727 LM2737 MTC14 Si4826DY SLF12575T-1R2N8R2 TDK MLCC 1206 100uF LM27x7
Contextual Info: LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages General Description Features The LM2727 and LM2737 are high-speed, synchronous, switching regulator controllers. They are intended to control currents of 0.7A to 20A with up to 95% conversion efficiencies. The LM2727 employs output over-voltage and undervoltage latch-off. For applications where latch-off is not desired, the LM2737 can be used. Power up and down

Contextual Info: Am8163/Am8167 Am8163/Am8167 Dynamic Memory Timing, Refresh and EDC Controllers DISTINCTIVE CHARACTERISTICS • • • • Complete CPU to dynamic RAM control Interface RAS/MSEL/óÀS Sequencer to eliminate delay lines Complete EDC/data path controls for Word/Byte read

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

Contextual Info: LM2742 www.ti.com SNVS266C – MARCH 2004 – REVISED MARCH 2013 LM2742 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Check for Samples: LM2742 FEATURES DESCRIPTION • • • The LM2742 is a high-speed, synchronous, switching

LTC1867

Abstract: LTC1863LCGN LTC1867L LTC6912 829D
Contextual Info: LTC1863L/LTC1867L Micropower, 3V, 12-/16-Bit, 8-Channel 175ksps ADCs DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 1863L/LTC1867L are pin compatible, 8-channel 12-/16-bit A/D converters with serial I/O and an internal reference. Sample Rate: 175ksps

AN-1197

Abstract: IRF7832 LM27241 LM27241MTC LM27241MTCX MTC20 TSSOP-20 tssop-18
Contextual Info: LM27241 Synchronous Buck Regulator Controller for Mobile Systems General Description Features The LM27241 is an adjustable 200kHz-500kHz single channel voltage-mode controlled high-speed synchronous buck regulator controller. It is ideally suited for battery powered

HFA16PB120

Abstract: HFA30PB120 IRFP250
Contextual Info: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and

CSA803

Abstract: 7s 803
Contextual Info: Application Notes 6. Jitter in Clock Sources Continuous advances in high-speed communication and measurement systems require higher levels of performance from system clocks and references. Performance acceptable in the past may not be sufficient to support high-speed synchronous equipment.

Contextual Info: VP213 H f M IT E L Dual 90MHz 6-Bit Analog to Digital Converter "'IMP1'1 Prelim inary Inform ation s e m ic o n d u c t o r DS4067 - 1.4 May 1996 The VP213 is a dual 90MHz 6-bit Analog to Digital Converter designed for use in consumer satellite receivers