46DBM Search Results

EIA1414-2P

Abstract: EIB1414-2P
Contextual Info: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EIA1818-2P

Abstract: EIB1818-2P f1815
Contextual Info: Excelics EIA/EIB1818-2P PRELIMINARY DATA SHEET 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EIA1718-2P

Abstract: EIB1718-2P
Contextual Info: Excelics EIA/EIB1718-2P PRELIMINARY DATA SHEET 17.7-18.7GHz, 2W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

LM79GCP

Abstract: EIA1819-2P EIB1819-2P
Contextual Info: Excelics EIA/EIB1819-2P PRELIMINARY DATA SHEET 18.7-19.7GHz, 2W Internally Matched Power FET • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EIA1314-2P

Abstract: EIB1314-2P
Contextual Info: Excelics EIA/EIB1314-2P PRELIMINARY DATA SHEET 13.75-14.5GHz, 2W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EIA1213-2P

Abstract: EIB1213-2P
Contextual Info: Excelics EIA/EIB1213-2P PRELIMINARY DATA SHEET 12.75-13.25GHz, 2W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

TR9770

Contextual Info: Available as: RF AMPLIFIER MODEL TR9770 TR9770, 4 Pin TO-8B T8 TR9770-9, 12 Pin TO-8B (T9) RN9770, 4 Pin Surface Mount (SM 19) BR9770, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 0 C • ■ ■ ■ Second Order Harmonic Intercept Point+46dBm (Typ.)

Contextual Info: RF AMPLIFIER MODEL TR9756 Available as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point.+46dBm Typ. Second Order Two Tone Intercept Point. +40 dBm (Typ.) Third Order Two Tone Intercept Point.+26 dBm (Typ.)

Contextual Info: RF AMPLIFIER MODEL TR9771 Available as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point. +46dBm Typ. Second Order Two Tone Intercept Point. ,+4CdBm(Typ.) Third Order Two Tone Intercept Point. +26dBm (Typ.)

diode 1GHz

Abstract: EIA1718A-2P EIB1718A-2P
Contextual Info: Excelics EIA/EIB1718A-2P PRELIMINARY DATA SHEET 17.3-18.1GHz, 2W Internally Matched Power FET • • • • • • 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

Contextual Info: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

Contextual Info: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

Contextual Info: RF AMPLIFIER MODEL TR9772 A v a ila b le as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +46dBm Typ. Second Order Two Tone Intercept Point.+40dBm (Typ.) Third Order Two Tone Intercept Point. +26dBm (Typ.)

Contextual Info: High Power Amplifier Module 935 – 960MHz, 23dB AM091047SF-2H April 2010 Rev 3 DESCRIPTION AMCOM's AM091047SF-2H is a Cellular Broadband Power Amplifier designed for high power applications. The class AB amplifier operates from 935 to 960MHz and delivers a minimum P1dB of +46dBm and a

LTC5567

Contextual Info: LTC6417 1.6GHz Low Noise High Linearity Differential Buffer/16-Bit ADC Driver with Fast Clamp DESCRIPTION FEATURES 1.6GHz –3dB Small Signal Bandwidth Low Distortion Driving 50Ω Load, 2.4VP-P Out –100dBc/–69dBc HD2/HD3 at 140MHz –80dBc IM3 and 46dBm OIP3 at 140MHz

Contextual Info: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug

EIA1011-2P

Abstract: EIB1011-2P
Contextual Info: Excelics EIA/EIB1011-2P PRELIMINARY DATA SHEET 10.7-11.7GHz, 2W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

Contextual Info: SHF-1000 DC -8 GHz, 4 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +36dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +46dBm Output 3rd Order Intercept Point • Low Cost Copper Tungsten Package

G6430

Abstract: LTC5567 LT6416 6417 6417F DC1685A
Contextual Info: LTC6417 1.6GHz Low Noise High Linearity Differential Buffer/16-Bit ADC Driver with Fast Clamp Description Features 1.6GHz –3dB Small Signal Bandwidth n Low Distortion Driving 50Ω Load, 2.4V P-P Out –100dBc/–69dBc HD2/HD3 at 140MHz –80dBc IM3 and 46dBm OIP3 at 140MHz

EIA1415-2P

Abstract: EIB1415-2P
Contextual Info: Excelics EIA/EIB1415-2P PRELIMINARY DATA SHEET 14.40-15.35GHz, 2W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

SMM-280-4

Abstract: s parameters 4ghz
Contextual Info: SMM-280-4 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier April, 1995 Features - 24dB Gain and 36dBm Output Power - High Third Order Intercept, +46dBm Typ - High Power Added Efficiency - Low VSWR 1.7:1 Typical - Copper-Tungsten Package ,6 4 0 - P 2X .5 60 2X .0 40

Contextual Info: Preliminary DS/SGN31E030MK High Voltage - High Power GaN-HEMT Driver for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 46dBm typ. @ Pin=2.5W (34dBm) •High Linear Gain : 15dB(typ.) @ f=3.1GHz DESCRIPTION Sumitomo GaN-HEMT DS/SGN31E030MK offers high efficiency, ease of

Contextual Info: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug

124500

Abstract: 121-430 sn 2509 k
Contextual Info: « HSXAWAVS Features HWF1687RA Medium Power GaAs FET September 1998 Rev.B • Output Power P id B = 3 1.5dBm typ. @2.4GHz • High Gain G l= 16dB(typ.)@2.4GHz OUTLINE DRAW ING • High Efficiency T|add =45%(typ.)@2.4GHz • High Linearity IP3=46dBm(typ.)@2.4GHz