44SOP FLASH MEMORY Search Results

LH28F

Abstract: bt12 bl70
Contextual Info: FLASH MEMORY j _ ☆ New product • FLASH MEMORIES ★ Underdevelopment ♦ Features • Smart voltage technology provides the most flexible voltage solution (from 3.3 V single to 5 V single, and to the dual voltage-3.3 V/5 V, 3.3 V/12 V, 5 V/12 V for wider application from battery operated PDAs to industrial

lh28f320bjd

Abstract: AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11
Contextual Info: June/18/2002 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.

Contextual Info: FLASH MEMORY 8M AND 16M DENSITIES • 8M AND 16M FLASH MEMORY WITH 120ns AND 150ns ACCESS TIMES • PLEASE CONTACT FLINT FOR DETAILS OF THE 16M PARTS 8M AND 16M FLASH MEMORY • • • • • New Product Access Voltage Icc Part Number Size Format ns V mA max

lh28f800bvhe-tv85

Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
Contextual Info: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V

lh28f320bjd

Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Contextual Info: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.

lh5s4

Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Contextual Info: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T

lh537

Abstract: 42DIP lh533200 LH535g
Contextual Info: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H

MX29LV160D

Abstract: S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D
Contextual Info: APPLICATION NOTE Migrating to the Macronix MX29LV400C/800C/160D/320D Flash Families from Spansion S29AL004D/008D/016D/032D Devices. Contents Introduction. 2

Contextual Info: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85

lh5s4

Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
Contextual Info: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply

ce 2752

Abstract: ST23L3210 44-TSOPII 44TSOP X6760
Contextual Info: ST Sitronix ST23L3210 32-Mbit 4M x 8 / 2M x16 Mask ROM FEATURES „ „ „ „ GENERAL DESCRIPTION The ST23L3210 is a wide range operation, 32M-bit, Read Only Memory. It is organized as 4M x 8 bits (byte mode) or Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode)

msm5232

Abstract: d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit
Contextual Info: Semiconductor Shortform Catalogue June 1999 Taupo Bay, New Zealand Foreword Strong Partnerships http://www.arm.com/ http://www.rambus.com/ http://www.elan.fr/ http://www.dialogic.com/ http://www.symbionics.co.uk/ http://www.vividsemi.com/ Oki Semiconductor Websites

MSP55lv512

Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
Contextual Info: ＡＦ９８４５／４５Ｂ／４５Ｃ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９８４５ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｂ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｃ ＧＡＮＧ ＵＮＩＴ Ｆｌａｓｈ Ｓｕｐｐｏｒｔ Ｇｒｏｕｐ，Ｉｎｃ．

A3 3308

Abstract: ST23L6410 Sitronix
Contextual Info: ST Sitronix ST23L6410 64-Mbit 8M x 8 / 4M x16 Mask ROM FEATURES „ „ „ „ GENERAL DESCRIPTION The ST23L6410 is a wide range operation, 64M-bit, Read Only Memory. It is organized as 8M x 8 bits (byte mode) or Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode)

28F002-T

Contextual Info: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package

MX29LV320E

Abstract: MX29LV320D BOTTON Macronix Macronix International AN060 MX29LV32 22A8h
Contextual Info: APPLICATION NOTE Migrating to MX29LV320E from MX29LV320D 1. Introduction This application note describes the major differences between MX29LV320E and MX29LV320D. All the information in this document is based on the latest datasheet of the MX29LV320E and it

lh5s4axx

Abstract: sharp mask rom LH53F4600 lh5s4 LH5S flash memory 4m 44-pin
Contextual Info: LH53F4600 4M Mask ROM SHARP LH53F4600 • Description Flash Memory Compatible pinout 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53F4600N User’s No. : LH-5S4ZXX is a CMOS 4Mbit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be

AC23C16200B

Abstract: flash memory 5v 16M-bit 48 TSOP
Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Description The AC23C16200B high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23C16202 Description The HY23C16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23C16202 Description The HY23C16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

HY23V16202

Abstract: HY23V16202D HY23V16202S HY23V16202T 48TSOP
Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

16202

Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23C16202 Description The HY23C16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery