40TSOP Search Results

lh28f800bvhe-tv85

Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
Contextual Info: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V

LH28F128SPHTD-PTL12

Abstract: 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
Contextual Info: Memory Product Selector Guide 8M AND 16M SYMMETRICAL FLASH DENSITY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 x8 85 I 120 C 85 C 85 I 85 C 120 C 12 V LH28F008SCN-L85

Contextual Info: EFST F49L004UA / F49L004BA 4 Mbit 512K x 8 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z Compatible with JEDEC standard - Pinout, packages and software commands compatible with single-power supply Flash

23c8100

Abstract: MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C8100TC-12
Contextual Info: MX23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%

MT48LC8M16A2

Abstract: PC15 RTL8201BL header8 DB9_MALE AT45DB128
Contextual Info: Port C Pins assignment 104 PB22/SCK1 as UART1 RI Input 122 PB27/PCK0 as UART1 DTR (Output) ADDR12 not connected to U3,U4 ADDR13 connected to U3.A11,U4.A11 See Page 139 Man.rev.from 22-Aug-03 R11 10 C27 0.1uF R14 10 C30 0.1uF R18 10 C19 0.1uF VDDPLL PLLRCA

Contextual Info: MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55R/70/90ns

lh28f320bjd

Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Contextual Info: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.

pal 007c

Abstract: b1100 nec LDP16 sulzer s7 7-segment countdown timer MDP36 100LQ128 3pin round shell connector DP83932B LT1084CT-3.3
Contextual Info: MiniRISC BDMR4011 Evaluation Board User’s Guide A CoreWare® Product March 1998 ® Order Number XXXXX Document DB15-000055-00, First Edition March 1998 This document describes revision A of LSI Logic Corporation’s BDMR4011 Evaluation Board and will remain the official reference source for all revisions/releases of this product until rescinded by an update.

lh5s4

Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
Contextual Info: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.

AB-65

Abstract: E28F800B5 intel e28F400b5 44-PSOP 44PSOP 29219* intel
Contextual Info: E AB-65 APPLICATION BRIEF Migrating SmartVoltage Boot Block Flash Designs to Smart 5 Flash December 1997 Order Number: 292194-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

Contextual Info: Introduction Selection Guide PRELIMINARY MX29L8000T/B 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write • JEDEC-standard EEPROM commands • Endurance : 100,000 cycles

28F002-T

Abstract: 3A00 28F002T MX28F002 MX28F002-B MX28F002-T
Contextual Info: Introduction Selection Guide MX28F002T/B 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current • Programming and erasing voltage 12V ± 5%

E28F800B5

Abstract: AB-65 56-TSOP intel e28F400b5 29219* intel
Contextual Info: AB-65 APPLICATION BRIEF Migrating SmartVoltage Boot Block Flash Designs to Smart 5 Flash December 1996 Order Number: 292194-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of

MX29LV004T

Abstract: SA10
Contextual Info: PRELIMINARY MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation

Contextual Info: MX27C2100/27C2048 2M-BIT [256Kx8/128x16] CMOS EPROM FEATURES • • • • • 128K x 16 organization MX27C2048, JEDEC pin out • 256K x 8 or 128K x 16 organization(MX27C2100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/90/120/150 ns

Contextual Info: MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte mode only: - 262,411 x8 MX29LV002C/002NC - 524,288 x8 (MX29LV004C) - 1,048,576 x8 (MX29LV008C) • Sector Structure - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1

ATMEL 736 8pin IC

Abstract: ATMEL BIOS AT49lh00b4
Contextual Info: Features • Complies with Intel Low-Pin Count LPC Interface Specification Revision 1.1 – Supports both Firmware Hub (FWH) and LPC Memory Read and Write Cycles • Auto-detection of FWH and LPC Memory Cycles • • • • • • • – Can Be Used as FWH for Intel 8xx, E7xxx, and E8xxx Series Chipsets

Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

Contextual Info: PRELIMINARY MX29LV004C T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation

49LF040B

Abstract: 49LF040B 33-4C-NHE sst49lf040b-33-4c-nhe datasheet SST49LF040B CL1226
Contextual Info: 4 Mbit LPC Flash SST49LF040B SST49LF040B4Mb LPC Flash memory Advance Information FEATURES: • 4 Mbit SuperFlash Memory Array for Code or Data Storage – SST49LF040B: 512K x8 4 Mbit • Conforms to Intel LPC Interface Specification – Supports Single-Byte LPC Memory Cycle

SST31LF041

Abstract: SST31LF041A SST31LF043 SST31LF043A
Contextual Info: 4 Mbit Flash + 1 Mbit / 256 Kbit SRAM ComboMemory SST31LF041 / SST31LF041A / SST31LF043 / SST31LF043A SST31LF041 / 041A / 043 / 043A4Mb Flash x8 + 1Mb / 256Kb SRAM (x8) Monolithic ComboMemories Preliminary Specifications FEATURES: • Monolithic Flash + SRAM ComboMemory

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

sharp mask rom

Contextual Info: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH