3A00 Search Results

LTTS e3

Abstract: gbs transistors
Contextual Info: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,

3A001

Abstract: ECCN HTS LTC2262CUJ-12 self
Contextual Info: ECCN Exception List ECCN EXCEPTION LIST FOR LINEAR TECHNOLOGY PARTS Section 1 lists devices that are under ECCN# 3A991 & 5A991 Section 2 lists the devices that are under ECCN 3A001 and are controlled for export Section 3 lists devices that are encryption/cryptographic devices and are primarily ECCN# 5A002

IEC 60320-1

Abstract: 68nf x2 capacitor 68nf FM-4-XX-43402 FM-4-XX-41402 06 h3 33 fuse
Contextual Info: FMCS 2 units module Filter-Module-Connect-System S 1 Power line L E N S KM-2-10-21 FM-3-XX-3A001 Power line L 2 Y1 E FM-3-XX-3A002 Y1 N S Mod. B FM-3-XX-3B001 Power line L 3 X2 E FM-3-XX-3B002 N S Mod. 1 FM-3-XX-31001 4 Power line L Y2 X2 E FM-3-XX-31002 Y2

Contextual Info: Page 1 of 1 HMC958LC5 14 Gbps 4:1 Selector SMT with Programmable Output Voltage Quality & Reliability Product Details Request Data Sheet ECCN: 3A001.a.11.b Life Cycle Status Production, Recommended for New Designs Press & Media Data / Clock Rate Gbps/GHz

J027

Abstract: TGA49
Contextual Info: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm

Contextual Info: TGA4532-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-band Sat-Com QFN 4x4mm 20L Product Features • • • • • • • • Functional Block Diagram Frequency Range: 17.7 – 19.7 GHz Power: 32.5 dBm Psat, 31 dBm P1dB Gain: 23 dB

TGA4512-SM

Abstract: RO4003 Ka-band
Contextual Info: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB

3A001

Abstract: Ka-band free circuit diagram of rf id
Contextual Info: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

amic a290021t-70

Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Contextual Info: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

3520H

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-13723-8Ea 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90390 Series MB90394HA/F394HA/F395HA/V390HB • DESCRIPTION The MB90390-series with up to five FULL-CAN interfaces and Flash ROM is especially designed for automotive

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

TMS320C5000

Abstract: XDS100 TMS320C5514
Contextual Info: TMS320C5514 SPRS646D – AUGUST 2010 – REVISED APRIL 2011 www.ti.com TMS320C5514 Fixed-Point Digital Signal Processor Check for Samples: TMS320C5514 1 Fixed-Point Digital Signal Processor 1.1 Features 12 • High-Performance, Low-Power, TMS320C55x Fixed-Point Digital Signal Processor

29F032B

Abstract: m29f032b
Contextual Info: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology

Contextual Info: TMS320C5515 SPRS645D – AUGUST 2010 – REVISED APRIL 2011 www.ti.com TMS320C5515 Fixed-Point Digital Signal Processor Check for Samples: TMS320C5515 1 Fixed-Point Digital Signal Processor 1.1 Features 12 • High-Performance, Low-Power, TMS320C55x Fixed-Point Digital Signal Processor