LH537 Search Results

Lemo

Contextual Info: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.

LH537

Abstract: NAE03
Contextual Info: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.

jwu17

Contextual Info: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.

Contextual Info: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

lh5s4

Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
Contextual Info: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.

lh537

Abstract: 42DIP lh533200 LH535g
Contextual Info: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H

cey marking code

Abstract: 816P
Contextual Info: SHARP L H 5 3 1 6 P 0 ODD C O N T E N T S 1. General Description P2 2. Features P2 3. Block Diagraa P3 4. Pin Connections P4 5. Pin Description P4 6. Absolute ïaiinna Ratings PS 7. Opwatine Sanges P5 S. B.C. Electrical Characteristics P5 9. À.C. Electrical Characteristics

lh5s4

Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Contextual Info: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T