42DIP Search Results

J241

Abstract: J239
Contextual Info: M3T-42DIP-DMS Converter Board for Connecting 42P4B to 42P2R User's Manual Keep safety first in your circuit designs! • Renesas Technology Corporation and Renesas Solutions Corporation put the maximum effort into making semiconductor products better and more

all ic data

Contextual Info: M3T-42DIP-DMS Converter for Connecting 42-pin RSS Type Emulator MCU to M3T-DCT42B-450 or M3T-SSOP42B-450 Function This converter connects a 42-pin 1.778mm-pitch SDIP (42P4B or 42S1B-A) package to the connector provided at the top of the direct dummy IC (M3T-DCT42B-450 or M3T-SSOP42B-450).

14Q7

Contextual Info: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access

U 324 SAMSUNG

Abstract: KM23C8100BG 524288X16
Contextual Info: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)

LHMN5

Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Contextual Info: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word

MASK ROM 32M PROGRAM

Abstract: K3N6C4000E-DC mask rom A2034
Contextual Info: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)

Contextual Info: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF

A94-10

Abstract: 4000E
Contextual Info: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V

Contextual Info: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access

lh28f320bjd

Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Contextual Info: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.

16202

Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access

MCHC705B16N

Abstract: MC705P6ACPE MC705P6ACDWE XC705B32CFNE MC68HC705C8ACFNE MC68HC705B16NCFN MC68HC705SR3CP MC705P6ac MC705P6AMDWE MCHC705B16NVFNE
Contextual Info: ç Prev Page Next Page è Microcontrollers – 8 and 16 Bit HC705 Family — 8-Bit Features: • 68HC705 CPU with the addition of EPROM memory • Fully static design allowing operation down to DC • 8- bit accumulator • 8-bit index register • 16-bit stack pointer • On-chip oscillator • 16-bit timer with built in prescaler, or 15-bit

Contextual Info: K3N4V U 1000D-D(G)C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)

Contextual Info: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.

Contextual Info: SAMSUNG ELECTRONICS INC fc.7E D • □ G17 1 1 b b?G KM23C32005 CMOS MASK ROM 32M-Bit 2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization • Fast access time Random access: 150ns (max.) Page access: 70ns (max.) • Supply voltage: single +5V

Contextual Info: LH53V8000 FEATURES C M O S 8 M 1 M x 8 / 5 1 2 K x 16 3 V - D r iv e M a s k - P r o g r a m m a b le R O M PIN CONNECTIONS • 1,048,576 words x 8 bit organization (Byte mode) 42-PIN DIP TOP VIEW r A-ie C 1« Ai? C 2 524,288 words x 16 bit organization

Z04B

Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Contextual Info: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply

Z04B

Abstract: MARK Z04D
Contextual Info: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as

SO 42 P

Abstract: 28SDIP SHARP 19
Contextual Info: P ackage Outline Package Outline Unit : mm 9SIP (Heatsink) SHARP» 12 Package Outline •SHARP 13 Package Outline 22DIP 'SHARP 14 Package Outline DIP 24DIP 24SDIP 13.2±0 25 ® © ® ® 13.2±0 25 3 6 .0 *" 15.24TYP 4.25±OJ25 31.0“ -3 15.24TYP ®

42-DIP-6Q0

Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

M8512

Abstract: samsung dram AM8512 TSOP 56 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER

x-ray inverter

Abstract: KA2130A KA2103L ka2107 10dip 14-DIP sawtooth generator KA2133 apc inverter circuit 10-SIPH
Contextual Info: FUNCTION GUIDE LINEAR ICs 2. VIDEO APPLICATION 1.1 TV Application Applecation Type SIF System KA2101 Sound System Sound Muting Circuit Function Package 14DIP IF amp, IF limiter, IF detector KA2102A 14DIP H/S KA2101 +2.4W audio power amp KA2103L 9SIP Hori sync detector, Integrator, Comparater,

23c64000

Abstract: 64M-BIT ROM 2710
Contextual Info: CMOS MASK ROM KM23C64000 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C64000 is a fully static mask program m able ROM • • • • 4,194,304 x 16 bit organization Fast access tim e : 120ns(Max.) Supply voltage : single +5V