KM23V8100D Search Results

42-DIP-6Q0

Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

A18T

Abstract: 23V8100DG
Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

KM23V8100D

Abstract: KM23V8100DET KM23V8100DT
Contextual Info: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V

KM23V8100D

Abstract: KM23V8100DG
Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

Contextual Info: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V

KM23V8100D

Abstract: KM23V8100DET KM23V8100DT
Contextual Info: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V

KM23V8100D

Abstract: KM23V8100DG
Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

tl 0741

Abstract: 3.3v 1Mx8 static ram high speed
Contextual Info: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)

Contextual Info: Preliminary KM23V81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 8 1 0 0 D (E )T is a fu lly static m ask p ro gra m m a ble S w itch a b le organ izatio n 1,048,576 x 8 (b yte m ode) 5 24,288 x 1 6(w ord m ode)

Contextual Info: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)

Contextual Info: KM23V8100P E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEA TU R ES G EN ERA L DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 100ns(Max.) 3.0V operation: 120ns(Max.)

Contextual Info: CMOS MASK ROM KM23V81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16

48TSOP1

Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15