LH28F Search Results

A18E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Contextual Info: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

LH28F320BFHE-PBTL80

Abstract: AP-007-SW-E
Contextual Info: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

LH28F800BJHE-PBTLT9

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F800BJHE-PBTLT9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF80JT9) Lead-free (Pb-free) Spec. Issue Date: October 8, 2004 Spec No: EL16X081 LHF80JT9 ●Handle this document carefully for it contains material protected by international copyright law.

LH28F640BFHG-PBTL70A

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

LH28F320BFHE-PBTLF1

Abstract: Flash Memory 32Mbit DQ15DQ0
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

LH28F160S3NS-L10

Abstract: LHF16KA1
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright

LH28F160S3HNS-L10A

Abstract: LHF16KAU
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10A Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF16KAU) Spec No.: EL138074 Issue Date: September 5, 2001 sharp LHF16KAU ●Handle this document carefully for it contains material protected by international copyright

LH28F800BJHB-PTTL10

Abstract: FC004 ap007 7D002
Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJHB-PTTL10 Jul. 6. 2001 LHF80J24 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

LH28F320BJE-PBTL90

Abstract: LHF32J06
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F320BJE-PBTL90 Flash Memory 32M 2M x 16/4M × 8 (Model No.: LHF32J06) Spec No.: EL121090A Issue Date: October 25, 2000

LH28F160BGH-TL

Abstract: LH28F160BG-TL TSOP048-P-1220
Contextual Info: LH28F160BG-TL/BGH-TL LH28F160BG-TL/BGH-TL 16 M-bit 1 MB x 16 Smart 3 Flash Memories DESCRIPTION Y R A L FEATURES • Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read • SRAM-compatible write interface

56-PIN

Abstract: LH28F008SA LH28F016SA
Contextual Info: LH28F016SA FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 3/5 1 56 CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.43 MB/sec Write Transfer Rate

Contextual Info: ^EDI EDI7F34IM C 1Megx32 ELECTRONIC DESIGNS INC 1Megx32 Flash Module Block Diagrams The EDI7F34IMC and EDI7F2341MC are orga­ nized as one and two banks of 1 Meg x 32 respec­ EDI7F34IMC-BNC tively. T h e m odules are based on S harp's 1Megx32 80pin SIMM LH28F800SU - 1Megx8 Flash device in TSOP

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: EDI7F4342MC 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Sharp's LH28F016SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current

LH28F008BJT-BTLZC

Abstract: LHF08JZC
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F008BJT-BTLZC Flash Memory 8M 1Mb x 8 (Model Number: LHF08JZC) Lead-free (Pb-free) Spec. Issue Date: October 5, 2004 Spec No: EL16X020 LHF08JZC ●Handle this document carefully for it contains material protected by international copyright law.

9016

Abstract: EDI7F34IMC EDI7F34IMC-BNC LH28F800SU CG35
Contextual Info: EDI7F34IMC 1Megx32 1Megx32 Flash Module The EDI7F34IMC and EDI7F2341MC are organized as one and two banks of 1 Meg x 32 respectively. The modules are based on Sharp's LH28F800SU - 1Megx8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: ^EDI EDI7F4342MC • ELECTRONIC DESIGNS, INC. Features 4x2Megx32 4x2Megx32 Flash Module • 4 x 2 Meg x 32 The EDI7F4342MC is organized as four banks of 2 Meg x • Based on Sharp's LH28F016SU Flash Device 32. The module is based on Sharp's LH28F016SU - 2Megx8

Contextual Info: LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL LH28F008SC-T/SCH-T LH28F008SC-TL/SCH-TL 8 M-bit 1 MB x 8 Smart 3 Flash Memories DESCRIPTION The LH28F008SC-T/SCH-T/SC-TL/SCH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a

13B1

Abstract: LH28F008SAHT-85
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAHT-85 Flash Memory 8M 1M x 8 (Model No.: LHF08S51) Spec No.: EL103202A Issue Date: August 27, 1998 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

LH28F800BVE-BTL90

Abstract: LHF80V11
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVE-BTL90 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V11) Issue Date: September 20, 1999 sharp LHF80V11 ●Handle this document carefully for it contains material protected by international copyright law.

28F008SA

Abstract: E0000 LH28F008SCR-L85 LHF08CH2
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCR-L85 Flash Memory 8M 1MB x 8 (Model No.: LHF08CH2) Spec No.: EL104029B Issue Date: February 1, 1999 sharp LHF08CH2 ●Handle this document carefully for it contains material protected by international

LH28F800BVHE-BV85

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVHE-BV85 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V37) Spec No.: EL109096A Issue Date: September 27, 1999 sharp LHF80V37 ●Handle this document carefully for it contains material protected by international copyright law.

LH28F800BJHE-PTTL90

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BJHE-PTTL90 Flash Memory 8M 512 KB x 16 / 1MB × 8 (Model No.: LHF80J03) Spec No.: EL152047 Issue Date: February 14, 2003 sharp LHF80J03 ●Handle this document carefully for it contains material protected by international copyright law.

28F008SA

Abstract: LH28F016SCR-L95
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F016SCR-L95 Flash Memory 16M 2MB x 8 (Model No.: LHF16C18) Spec No.: EL104171 Issue Date: September 30, 1998 sharp LHF16C18 ●Handle this document carefully for it contains material protected by international

EDI7F4342MC

Abstract: LH28F016SU a1458
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES n 4x2Mx32 n Based on Sharp's LH28F016SU Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Low Power Dissipation n 60mA per Device Active Current n 10µA per Device CMOS Standby Current