44S3 Search Results

Contextual Info: Preliminary CMOS SDRAM 44S32030 8M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S32030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 8,388,608 w ords by 4 bits,

Contextual Info: Preliminary KMM377S3227BT2 SDRAM MODULE KMM377S3227BT2 SDRAM DIMM Intel 1.1 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S3227BT2 is a 32M bit x 72 S ynchro­

ESAN

Abstract: 44S20 44S02 44S100
Contextual Info: E-SAN ELECTRONIC CO LTD ^E Surface M ounting D elay Line A ctive • Triple In * O u t Delay Specifications: • Delay tolerance • • • • • • • • • • • • D 3D374D2 □□□□□33 3 • 4 4 S Series • TTL Compatible • 14 Pin Dii Package

D403a

Abstract: Z16C3010gmb burn-in SS00010 44s3 AETA
Contextual Info: PRELIMINARY MILITARY PRODUCT SPECIFICATION Z16C30 C M O S USC U niversal S erial C ontroller ZILGS016 •l PRELIMINARY MILITARY PRODUCT SPECIFICA TION < £ > Z iiæ Z16C30 CMOS U SC U n iv e r s a l S e r ia l C o n t r o ll e r FEATURES • 32 byte data FIFO's for each receiver and transmitter.

Contextual Info: SDRAM MODULE Preliminary KMM375S3227BT Revision History Revision 1 May 1998 - PCB type has been changed to Intel 0.6 version. - CLK Input Cap. is added by PLL Input Cap. (27pF) - CKE1 is inserted. Revision 3 (July 1998) - "REGE" description is changed. REV. 3 July 1998

Contextual Info: Shrínk-TSOP KMM377S6520BN Prelim inary 512MB Registered DIMM 512MB Registered DIMM based on 128Mb SDRAM sTSOP2 Revision 0.0 July 1999 S am sung E lectronics reserves th e right to cha ng e pro du cts o r spe cifica tion w ith o u t notice. Rev. 0.0 July 1999

Contextual Info: SDRAM MODULE Preliminary KMM377S3320T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. Revision 5 (November 1998) - Corrected DQ# at the input of SDRAM(D5) as DQ16-19 @Functional Block Diagram

M3786/4

Abstract: 71MBS30 M3786/4-6149
Contextual Info: PRODUCT ADVISORY NOTICE KEEPING YOU INFORMED OF PRODUCT CHANGES To: All Customers, Sales Representatives and Distributors Date: January 30, 2015 Subject: Plating material change on rotary and push button switches This Product Advisory Notice is to alert you that there is a coming material change to all Grayhill standard

KMM377S3227BT2-GH

Abstract: KMM377S3227BT2-GL
Contextual Info: Preliminary KMM377S3227BT2 SDRAM MODULE K M M 377S3227BT2 SDRAM DIMM Intel 1.1 ver. Base 32M x72 SDR AM DIMM w ith PLL & R egister based on Stacked 32M x4, 4B anks, 4K Ref., 3.3V S D R A M s with SPD FEATURE G ENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S3227BT2 is a 32M bit x 72 Synchro­

Contextual Info: Preliminary SDRAM MODULE_ KMM377S3320T2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S3320T2 SDRAM MODULE KMM377S3320T2 SDRAM DIMM (Intel 1.1 ver. Base)

Contextual Info: C-Press 3009 Series C-Press® Sip Socket Connector SPECIFICATIONS INSULATOR Material: Polycarbonate MATING COMPONENT TAIL REQUIREMENTS: Width: 0.381 - 0.584 mm Thickness: 0.204 - 0.40 mm Insertion depth: 4.5 mm max. Termination: Solderless press-fit TECHNICAL DATA

44s32

Contextual Info: Preliminary KMM377S3320T3 SDRAM MODULE KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S3320T3 is a 32M bit x 72 S ynchro­

Contextual Info: SDRAM MODULE Preliminary KMM377S3227BT2 Revision History Revision 1 Feb. 1999 - C orrected CS S w apping in B lo ck Diagram . REV.1 Feb. 1999 ELECTRONICS Preliminary KMM377S3227BT2 SDRAM MODULE KMM377S3227BT2 SDRAM DIMM (Intel 1.1 ver. Base) 3 2 M x 7 2 S D R A M D IM M w ith P L L & R e g is te r b a s e d on S ta c k e d 3 2 M x 4 , 4 B a n k s , 4 K R ef., 3 .3 V S D R A M s w ith S P D

44s32

Contextual Info: Preliminary 44S32030 CMOS SDRAM 8M X 4Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The 44S32Q30 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,

Contextual Info: C-Press C-Press* Sip Socket Connector SPECIFICATIONS INSULATOR Material: Polycarbonate MATING COMPONENT TAIL REQUIREMENTS: Width: 0.381 -0.584 mm Thickness: 0.204 - 0.40 mm Insertion depth: 4.5 mm max. Termination: Solderless “C-Press’ press-fit TECHNICAL DATA

Contextual Info: 44S32030B CMOS SDRAM 128Mbit SDRAM 8M X 4Bit X 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 ELECTRONICS 44S32030B CMOS SDRAM R evision H istory

MS25274

Abstract: MS25274-3 44S3 class h amp 235J DUG1132
Contextual Info: 4 THIS DRAWINO IS UNPUBLISHED. RELEASED FOR PUBLICATION flV AMP INCORPORATED. COPYRIGHT 13 , 19 LOC ALL RIGHTS RESERVED. G DIST REVISIONS 14 LTR H DESCRIPTION REV / 0720-0906-96 DATE DUN APVD 21MAR96 LO ME D D 1. U S E F O R S T R I P P E D INSULATION B OD Y

AC125V

Abstract: 3PDT switch
Contextual Info: S M T m * x -r % y Green Switch Series i Green Switch Series Common Specifications A C 1 2 5 V % 6 A - A C 2 5 0 V 3 A Rating f ê A C - D C 5 V mm m m î L m m m m i± wm'mmvi W,^ â lJ 2 0 m Q H I T A C 1 ,5 0 0 V 7^ 4 V 1A l- f r ü S ] l. O O O M Q f c U t

C-Press

Abstract: Winchester ansi unc 4-40 screw 05s300 21-s300 HE61 5-44 UNF plug IPC-D-422 09NO3
Contextual Info: C-Press Table Of Contents Series Description Page Compliant Contact 3-4 Specifications 5 Edgecard Design Information For All C-Press® Edgecard Connectors 6 MK, NK, MJ & NJ Series Edgecard .100" x .200" C Grid 7-8 MK, NK, MJ & NJ Series Edgecard .125" x .250" D Grid

Contextual Info: SDRAM MODULE Preliminary KMM377S3227BT2 Revision History R e visio n 1 Feb. - 1999 Corrected CS Swapping in Block Diagram. REV.1 Feb. 1999 Preliminary KMM377S3227BT2 SDRAM MODULE KMM377S3227BT2 SDRAM DIMM (Intel 1.1 ver. Base) 32M x72 SDR AM DIMM w ith PLL & R egister based on S tacked 32M x4, 4B anks, 4K Ref., 3.3V S D R A M s w ith SPD

C-Press®

Abstract: IPC-D-422 MIL-C-28859 QQ-B-620 09NO3 winchester electronics litton A1856 barrier type double row screw terminal 6-48 UNS ipc SMB SMC
Contextual Info: C-Press Table Of Contents Series Description Page 184 & 188 Series Telecom Shielded Delta Ribbon Connector 32 - 33 121 Series Coaxial SMB and SMC 50 Ohm & 75 Ohm 34 - 35 121 Series Straight Jack SMA 50 Ohm Coaxial Press-fit Connector 36 121 Series Coaxial

Contextual Info: C-Press 3009 Series C-Press® Sip Socket Connector SPECIFICATIONS INSULATOR Material: Polycarbonate MATING COMPONENT TAIL REQUIREMENTS: Width: 0.381 - 0.584 mm Thickness: 0.204 - 0.40 mm Insertion depth: 4.5 mm max. Cube Contact Plating: Tin/Lead Temperature Range: