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    TE Connectivity ACT20MD97HE-6149 [V001

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    HE61 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HE8051S

    Abstract: HE8551S
    Contextual Info: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA


    Original     		he6119he8551s150mahe8051s+3183oc217oc260oc PDF

    he8050

    Contextual Info: HI-SINCERITY Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2004.11.29 Page No. : 1/4 MICROELECTRONICS CORP. HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B


    Original     		he6112he8050183oc217oc+1260oc PDF

    700 H2A

    Abstract: HE9018
    Contextual Info: HI-SINCERITY Spec. No. : HE6120 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HE9018 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner.


    Original     		he6120he9018183oc217oc+2260oc700 h2a PDF

    HE8550

    Contextual Info: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull


    Original     		he6114he8550150oc200oc+5183oc217oc260oc245oc10sec PDF

    he9015

    Abstract: HE9014
    Contextual Info: HI-SINCERITY Spec. No. : HE6101 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/5 MICROELECTRONICS CORP. HE9015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9015 is designed for use in pre-amplifier of low level and low noise. TO-92 Features


    Original     		he6101he9015450mwhe9014+3183oc217oc260oc PDF

    HE8551

    Contextual Info: HI-SINCERITY Spec. No. : HE6113 Issued Date : 1992.09.30 Revised Date : 2004.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HE8551 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551 is designed for use in 2W output amplifier of portable radios in class B


    Original     		he6113he8551183oc217oc+1260oc PDF

    HE8051

    Contextual Info: HI-SINCERITY Spec. No. : HE6115-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 MICROELECTRONICS CORP. HE8051 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.


    Original     		he6115-bhe8051 PDF

    HA8050S

    Abstract: HA8550S
    Contextual Info: HI-SINCERITY Spec. No. : HE6116 Issued Date : 1997.09.08 Revised Date : 2002.04.17 Page No. : 1/4 MICROELECTRONICS CORP. HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain hFE=100~500 at IC=150mA


    Original     		he6116ha8050sha8550s150ma PDF

    he6104

    Abstract: HE9013 HE9012
    Contextual Info: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2003.08.28 Page No. : 1/4 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.


    Original     		he6104he9013625mw500ma+1he9012 PDF

    HE8550

    Abstract: transistor he8550 HE8550B
    Contextual Info: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2003.10.03 Page No. : 1/3 MICROELECTRONICS CORP. HE8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.


    Original     		he6114he8550transistor he8550he8550b PDF

    HPN2222A

    Abstract: HPN2907A hpn2907
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6105 Issued Date : 1992.09.09 Revised Date : 2002.04.15 Page No. : 1/4 HPN2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications.


    Original     		he6105hpn2907ahpn2222ahpn2907 PDF

    HE9013G

    Abstract: HE9013 HE6104 HE9012
    Contextual Info: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2002.03.06 Page No. : 1/4 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.


    Original     		he6104he9013625mw500ma+2he9012he9013g PDF

    HE8550

    Contextual Info: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2001.08.13 Page No. : 1/3 MICROELECTRONICS CORP. HE8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.


    Original     		he6114he8550 PDF

    HE8051

    Abstract: transistor NPN TO-92 2W
    Contextual Info: HI-SINCERITY Spec. No. : HE6115 Issued Date : 1992.09.30 Revised Date : 2004.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HE8051 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051 is designed for use in 2W output amplifier of portable radios in class B


    Original     		he6115he8051183oc217oc+2260octransistor npn to-92 2w PDF

    100MHZ

    Abstract: HPH2369
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6133 Issued Date : 1993.06.18 Revised Date : 2002.02.18 Page No. : 1/4 HPH2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HPH2369 is designed for general purpose switching and amplifier applications. Features


    Original     		he6133hph2369100mhz PDF

    1902 transistor

    Abstract: HPN2369A HPN236 HE6106
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 1/4 HPN2369A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2369A is designed for general purpose switching and amplifier applications.


    Original     		he6106hpn2369a1902 transistorhpn236 PDF

    HE9014

    Abstract: HE9015
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6102 Issued Date : 1992.08.25 Revised Date : 2002.04.10 Page No. : 1/4 HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9014 is designed for use in pre-amplifier of low level and low noise. Features


    Original     		he6102he9014450mwhe9015 PDF

    HE8051

    Abstract: HE8551
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6113-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 HE8551 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.


    Original     		he6113-bhe8551he8051 PDF

    he8050

    Contextual Info: HI-SINCERITY Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2001.08.13 Page No. : 1/3 MICROELECTRONICS CORP. HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.


    Original     		he6112he8050 PDF

    HA8050

    Abstract: HA8550 HE6107
    Contextual Info: HI-SINCERITY Spec. No. : HE6107 Issued Date : 1998.09.05 Revised Date : 2004.11.29 Page No. : 1/5 MICROELECTRONICS CORP. HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B


    Original     		he6107ha8050ha8550183oc+2217oc260oc PDF

    he9014

    Abstract: he9015
    Contextual Info: HI-SINCERITY Spec. No. : HE6102 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/5 MICROELECTRONICS CORP. HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9014 is designed for use in pre-amplifier of low level and low noise. TO-92 Features


    Original     		he6102he9014450mwhe9015+3183oc217oc260oc PDF

    HPN2222A

    Abstract: HPN2907A
    Contextual Info: HI-SINCERITY Spec. No. : HE6105 Issued Date : 1992.09.09 Revised Date : 2004.12.15 Page No. : 1/5 MICROELECTRONICS CORP. HPN2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications.


    Original     		he6105hpn2907ahpn2222a183oc+2217oc260oc PDF

    HE8550S

    Abstract: HE8050S
    Contextual Info: HI-SINCERITY Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92


    Original     		he6129he8550s150mahe8050s+3183oc217oc260oc PDF

    he8050

    Abstract: transistor NPN TO-92 2W
    Contextual Info: HI-SINCERITY Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2003.10.03 Page No. : 1/3 MICROELECTRONICS CORP. HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.


    Original     		he6112he8050transistor npn to-92 2w PDF