449 SOT23 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES  Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR I FMMT449 ISSU E 3 - NOVEM BER 1995_ FEATURES * Low equivalent on-resistance; RCE sat! 250mii at 1A C O M PLEM EN TARY TYPE PARTMARKING DETAIL - FMMT549 449 ABSOLUTE M A X IM U M RATINGS.

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - NOVEM BER 1995 FEATURES * Low equivalent on-resistance; RcE Mt 250m Q at 1A E COM PLEM ENTARY T Y P E P A R T M A R K IN G D E T A IL - FM M T549 449 ABSOLUTE M A X IM U M RATINGS. PARAM ETER

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR _ ISSU E 3 - NOVEM BER 1995 FEATU RES * L o w equivalent on-resistance; RCE sat 250mQ at 1A C O M P LEM EN T A R Y TYPE - FM M T549 P A R T M A R K IN G D ET A IL - 449 ABSOLUTE M A X IM U M RATINGS.

BUZ90af

Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198

HSMP3811

Abstract: sot-23 MARKING CODE G1 HSMP3821 HSMP-3801 HSMP3831 HSMP3881 HSMP-3811 hsmp-3831 hsmp3801 HSMP-3881
Contextual Info: Surface Mount PIN Diodes Available Configurations SOT-23 DIE APPLICATION GUSS SINGLE SINGLE SERIES COMMON ANODE b R B / o HPNWXJ01 HPND-0002 HPND-0003 5082-0012 tr 'a S' X - ll XX ht-ir là ' COMMON CATHODE LOW LOW INDUCTANCE INDUCTANCE B a Il XX '- á -Ir 1

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT449 ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 250mΩ at 1A 0.8 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – 150 IC/IB=10 0.6 E C FMMT549

25 V 500mA TRANSISTOR SOT23

Abstract: FMMT449 FMMT549 DSA003694
Contextual Info: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds

25 V 500mA TRANSISTOR SOT23

Abstract: FMMT449 FMMT549 08 sot23
Contextual Info: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds

Contextual Info: www.fairchildsem i.com S E M I C O N D U C T O R tm RC431A Low -V oltage A d ju s t a b le Precision Shunt Regu lator Features Description • • • • • • The RC431A is a low-voltage 3-terminal adjustable preci­ sion voltage reference regulator. It has an excellent thermal

diode marking 53

Abstract: marking VB DIODE
Contextual Info: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

Contextual Info: KSR2113 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =2.2kC, R2=47kQ) • Complement to KSR1113 ABSOLUTE MAXIMUM RATINGS (TA=25t:)

Contextual Info: Transistors IC SMD Type Product specification FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol

FMMT449

Abstract: SMD TRANSISTOR MARKING 2A TRANSISTOR SMD 1a 9 MARKING 449
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) 3 i - y - L SOT-23 y - i OM07005 Maximum Ratings per Diode

transistor marking 2A H

Abstract: npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Planar Medium Power Transistor FEATURES z Pb Low equivalent on-resistance,RCE sat : Lead-free 250mΩ at 1A. z FMMT449 Complementary To FMMT549. APPLICATIONS z NPN silicon planar medium power transistor.

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

pn4393

Abstract: PN4391 equivalent PN4392 equivalent
Contextual Info: PN4391 SERIES N-Channel JFETs The PN4391 Series is the plastic equivalent of our popular 2N4391 Series. These devices are especially well suited for analog switching applications but function efficiently as high-gain amplifiers, particularly at high-frequency. Our low-cost TO-92 packaging

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates

BCW31

Abstract: BCW32 BCW33 IEC134 7Z6a ScansUX40 J 449
Contextual Info: 7 1 1 0 0 2 b []0bfl533 STÛ BCW31 BCW32 BCW33 IPHIN A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended fo r low level general purpose applications in thick and thin-film circuits. QUICK REFERENCE DATA

Contextual Info: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

XP151A02B0MR

Contextual Info: XP151A02B0MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.2Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A02B0MR is a N-Channel Power MOS FET with low on-state