400V POWER SUPPLY Search Results

IRFD310

Abstract: TB334
Contextual Info: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF330

Abstract: TA17414 TB334
Contextual Info: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFD310

Abstract: TB334 400V to 6V DC Regulator TO 220 Package
Contextual Info: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRFD320

Abstract: TA17404 TB334
Contextual Info: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

6EP1437-1SL11

Abstract: siemens sitop power 40 6ep1437-1sl11 siemens sitop power 20 6ep1336-1SH01 siemens 3VU1300 SITOP 40A 24V Sitop 6EP1437-1sl11 siemens sitop 40A SIEMENS, SITOP Power 40, 6EP1437-1sl11 6EP1336-1SH01 3VU1300
Contextual Info: SITOP Power Supplies Technical European Applications Only 6EP1336-1SH01 6EP1732-0AA00 6EP1437-1SL01 6EP1437-1SL11 SITOP Power Single-Phase/3-Phase Technical Specification Euro Line SITOP power DC 24V/2A Single-Phase 230V 24V/20A 3-Phase 400V 24V/30A 3-Phase 400V

IRFF310

Abstract: TB334
Contextual Info: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF330

Abstract: TA17414 TB334
Contextual Info: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds

IRF330

Abstract: TA17414 TB334 204AA
Contextual Info: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TOT - 4301

Abstract: LA 4303 IRFD320 TA17404 TB334
Contextual Info: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFF310

Abstract: TB334
Contextual Info: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFP340

Abstract: TA17424 TB334
Contextual Info: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

IRFP340

Abstract: TA17424 TB334 T2T-2
Contextual Info: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF332

Abstract: IRF3319 irf330
Contextual Info: I LArrrti— IRF330, IRF3319 IRF332, IRF333 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irff330

Contextual Info: y*Rg*s IRFF330, IRFF331, IRFF332, IRFF333 3.0A and 3.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 3.0A and 3.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFD320 S em iconductor Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1 -800i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

ifr320

Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
Contextual Info: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF730

Abstract: IRF731 irf730 harris TA17414
Contextual Info: h a f r r is IRF730, IRF731, IRF732, IRF733 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irfp350

Abstract: IRFP350 harris IRFP351
Contextual Info: h a r r is IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power