3N76 Search Results

Contextual Info: TELED.YNE components 2flE D • öT17tiQ5 NPN/PNP DUAL EMinER CHOPPER BI-POLAR TRANSISTORS DGObS^a 3 T_B I T -3 '7- a 3 3N62 to 3N136 GEOMETRY 460 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANTX-V * LOW OFFSET VOUAGE TO 30 mV(PNP)/10mV(NPN) HIGH BV 6 0 VOUS

3N79

Abstract: 3N74 2SC 9012 3N77 3N75 3N76 3N78 ScansUX7
Contextual Info: TYPES 3N74 THRU 3N79 N-P-N SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 2 1 1 6 9 2 , M A R C H 1 97 2 DOUBLE-EMITTER TRANSISTORS DESIGNED FOR CHOPPER APPLICATIONS • Low Offset Voltage • Excellent Thermal Stability • Very Low Leakage . . . 2 nA max at 15 V 3N74, 3N75, 3N76

3N74

Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
Contextual Info: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, 3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper

transistor 3N74

Abstract: 3n78 3N79 3N74
Contextual Info: 3N74 3N7S 3N76 3N77 3N78 3N79 N PN SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR LOW LEAKAGE LOW Ceb LOW rEE sat HIGH V EE & V EB E LEC TR IC A L D A T A A B S O L U T E M A X IM U M R A T IN G 3 N /7 4 /7 5 /7 6 SYM BO L PAR AM ET ER 3 N /7 7 /7 8 /7 9

3N79

Abstract: 3N74
Contextual Info: T Y P ES 3N74 TH R U 3N79 N -P-N SILIC O N T R A N S IS TO R S B U L L E T IN N O . D L S 7 2 1 1 6 9 2 , M A R C H 1972 DOUBLE-EMITTER TRANSISTORS DESIGNED FOR CHOPPER APPLICATIONS • Low Offset Voltage • Excellent Thermal Stability • Very Low Leakage . . . 2 nA max at 15 V 3N74, 3N75, 3N76

3N74

Abstract: 3n70 3N68 3n103
Contextual Info: NPN/PNP DUAL EMITTK CHOPPER BI-POLAR TRANSISTORS 3N62 / „ to i 3N136 GEOMETRY 450 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANÎX-V ' ä S S E S i S S “ ,0 LOW rec(sat) 8 Ohms (typ) ELECTRICAL CHARACTERISTICS AT 25 JC FREE-AIR TEMPERATURE •Vk o ■vcao

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

Bendix Transistors

Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

TIS43

Abstract: 3N79 3N74 3N108 transistor t05 2N2160 3N77 3n78 2N1671A 2N491A
Contextual Info: Silicon Transistors Type C ase No. 0 uÏ 0» c œ o " U Characteristics Maxim um R atin gs at 25°C amb. Interbase 'E peak Voltage Intrinsic Peak-current In te rb a se standoff Emitter Current Resistance ratio lp a t V B,B , = 2 5 V t bbo Max. Min. Max.

2SK752

Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777

st3043

Abstract: LOW-POWER SILICON NPN 40352 2N773 ST3042 bsy11 2S001 2SC859
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY