3JA1 Search Results

Contextual Info: ,ï l l u n , . HY5141OOA Series >79 I U N U n I 4M x 1-blt CMOS DRAM DESCRIPTION The HY5141 OOA is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY5141 OOA utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

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Abstract: km6810008 A12CZ KM681000BLI km6810008l
Contextual Info: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.

3JA1

Contextual Info: KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4002B is a CMOS high speed 4,194,304 x 1 Dynamic Random Access Memory, Its de­ sign is op tim ized fo r high pe rform ance ap p lica tio n s