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    3JA1 Search Results

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    Murata Manufacturing Co Ltd GCM31M5C1H473JA16L

    CAP CER 0.047UF 50V C0G/NP0 1206
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    DigiKey GCM31M5C1H473JA16L Reel 48,000 3,000
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    • 10000 $0.14
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    TTI GCM31M5C1H473JA16L Reel 9,000 3,000
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    • 10000 $0.11
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    Japan Aviation Electronics Industry Limited FR02C023JA1-R5000

    CONN FPC 23POS 0.2MM R/A
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    DigiKey FR02C023JA1-R5000 Digi-Reel 13,269 1
    • 1 $1.36
    • 10 $1.16
    • 100 $0.98
    • 1000 $0.84
    • 10000 $0.81
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    Murata Manufacturing Co Ltd GCM21B5C1H183JA16K

    CAP CER 0.018UF 50V C0G/NP0 0805
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    DigiKey () GCM21B5C1H183JA16K Cut Tape 8,006 1
    • 1 $0.27
    • 10 $0.16
    • 100 $0.10
    • 1000 $0.07
    • 10000 $0.06
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    GCM21B5C1H183JA16K Digi-Reel 8,006 1
    • 1 $0.27
    • 10 $0.16
    • 100 $0.10
    • 1000 $0.07
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    Vishay Beyschlag PR02000201203JA100

    RES 120K OHM 5% 2W AXIAL
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    DigiKey PR02000201203JA100 Ammo Pack 5,000 1,000
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    • 1000 $0.11
    • 10000 $0.08
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    Vishay Beyschlag PR02000205603JA100

    RES 560K OHM 5% 2W AXIAL
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    DigiKey () PR02000205603JA100 Cut Tape 4,212 1
    • 1 $0.35
    • 10 $0.22
    • 100 $0.15
    • 1000 $0.12
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    PR02000205603JA100 Ammo Pack 3,000 1,000
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    • 1000 $0.08
    • 10000 $0.06
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    3JA1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ,ï l l u n , . HY5141OOA Series >79 I U N U n I 4M x 1-blt CMOS DRAM DESCRIPTION The HY5141 OOA is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY5141 OOA utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5141OOA HY5141 HY51410QA such1380 1AC06-30-MAY94 HY514100A HY514100AJ HY514100AU HY514100AT PDF

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Contextual Info: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


    OCR Scan     		KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l PDF

    3JA1

    Contextual Info: KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4002B is a CMOS high speed 4,194,304 x 1 Dynamic Random Access Memory, Its de­ sign is op tim ized fo r high pe rform ance ap p lica tio n s


    OCR Scan     		KM41C4002B KM41C4002B-6 KM41C4002B-7 KM41C4002B-8 110ns 130ns 150ns KM41C4002B 3JA1 PDF