3FL75DFLL Search Results

DF378F

Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
Contextual Info: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

DG212CJ

Abstract: DG211CJ
Contextual Info: E SOLID STATE DI G 3875081 G E SOLID D E | 3fl75Dfll DDlDflOfl b STATE 01E 10808 D DG211/DG212 DG211/DG212 SPST 4-Channel Analog Switch GENERAL DESCRIPTION FEATURES The DG211 and DG212 are low cost, C M O S monolithic, Q U A D S P S T analog switches. These can be used In gener­

transistor 2n4871

Abstract: 2N4871 2N4870 GET4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14 GET4870
Contextual Info: G E SOLID STATE 3875081 □Ï G E SOLID ]>E~ 3fl75Dfll □□IfiQOM (a STATE U n i j u n c t i o n T r a n s is t o r s a n r l S w it c h e s 01E 18004 D - T 31-21 2N4870,2N4871, GET4870, GET4871 Silicon Unijunction Transistors TO-92 TO-18 The GE/RC A 2 N 4 8 7 0,2N 4 8 71 , and GET4870, GET4871 are

MPS-A65

Contextual Info: G E SOLI» STATE Öl 3875081 G E SOLID » F | 3fl75Dfll 0G17TTE S STATE 01E 1 79 92 D T ' I I - Z l Signal Transistors- MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 6 5 is a p lan ar epitaxial passivated P N P

53-06A

Abstract: 2n5306 2N5305
Contextual Info: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are

LM114

Abstract: LM114A LM114AH LM114H AH TRANSISTOR
Contextual Info: E SOLID STATE □1 DE|3fl75Dfll □ □ 11 □ 4Ì LM114/H, LM 114A/AH Monolithic Dual NPN General Purpose Amplifier T-si^ 'sn GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This

2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

PCF35N08

Abstract: RFK35N08 RFK35N10
Contextual Info: 3875081 G E SOLID STATE -01 DE 1 • 3fl75Dfll GDiaSDa ¡i I T-ZI'OI Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

Contextual Info: G E SOLID STATE □1 DE | 3fl75Dfll DDllOMM S | 3875081 G E SOLID STATE 01E 11044 T - 3 D 7 ~ 2- 5“ n J174-J177 7 P-Channel JFET Switch «• APPLICATIONS Ê FEATURES • Analog Switches • Choppers • Commutators • Low Insertion Loss • No Offset or Error Generated By Closed Switch

2CS-H24I

Abstract: b2c2
Contextual Info: G E SOLI» STATE GÌ d T | 3fl75Dfll 0 0 1 3 5 ^ 0 'J- 3875081 G E SOLID STATE 01E 13249 - D T - ^ 3 - 2 - / CD4048B Types CM O S Multifunction Expandable 8-lnput Gate BINARY C O N T R O t INPUTS 'f u n c t i o n c o n t r o l Kfl Kft *C

GE SC160B triac

Abstract: Y4W diode y4w transistor H11AG3 y4w surface transistor H11AG2 H11AG1 DIODE Y4W SC160B y4w 7
Contextual Info: G E S O L I» 01 STATE DE § 3 075D Û 1 D 0 M 7 0 5 optoelectronic specifications. T - H l - Z 3 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 G a A1 A s In fra re d E m ittin g D io d e & N P N S ilicon P h o to -T ra n s isto r The G E Solid State H IIA G series consists o f a gallium arsenide infrared

3146E

Abstract: ca3183ae 3183a 3183e 3118A 3118T
Contextual Info: G E S O L I D S T A T E Dl D E | 3ä75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 T “'H 3 * 2 .5 High-Voltage Transistor Arrays Features • M atched general-purpose transistors ■ V g £ m atched + 5 m V max. ■ Operation from D C to 120 M H z C A 3 1 1 8 A T , T ; C A 3 1 4 6 A E , E

74HC125

Abstract: 92CS-3 74HCT125 4HC125
Contextual Info: G E SOLI» STATE 01 D E I 3Û7S0Û1 001154a D | 1 -V 3 -2 I _ Technical Data File Num ber CD54/74HC125 CD54/74HCT125 1771 High-Speed CMOS Logic Quad Buffer; 3-State Type Features: • Separate o u tp u t enable in p u ts ■ 3 -state o u tp u ts The R C A -C D 54/7 4H C 125 and C D 54/74H C T125 contain 4

cd4009 hex inverter ic

Abstract: AN-6539 6C04069
Contextual Info: G E SOLID STATE Dl D E | 3fl7S0fll DOlBa^a 1 j : 01E 13292_ D -, 3875081 G E SOLID STATE CD4069UB Types CMOS Hex Inverter Features: High-Voltage Types 20-Volt Rating The RCA-CD4069UB types consist of six CMOS Inverter circuits. These devices are intended fo r all general-purpose Inverter

Faa23

Contextual Info: ~G E SOLID STATE 01 De | 3fl7S0fll QD13L73 Q 01E 13672 ' 3875081 G E SOLID STATE CA3300 Types D “p CMOS Video Speed 6-Bit Flash Analog-to-Digital Converter For Use in Low-Power Consumption, High-Sp Digitization Applications ;u 18-Lead Dual-ln-Llne kPlastic Package

rca 40411

Abstract: 40411 transistor 40411 RCA 40411 transistor rca 40407 rca 40408 RCA 40408 transistor RCA-40406 40408 40411 rca
Contextual Info: G E SOLI» STATE 3 8 7 5 08 1 DE | 3fl?Safll D0174bS 4 □ 1 G E” S O L I D STATE Ó1E 17465 D u e n e ra i-ru ro o s e Ho^ r J i ^ n f ll f t t n r a T -3 3 -/3 -' File Numbei'219 40406> 40407j 40408, 40411 TERM IN AL DESIGNATIONS Silicon N-P-N and P-N-P

Contextual Info: 3875081 G E SOLID STATE 01 -p- 1 J- i, | D e | 3&750S1 0011410 0 TIP 42 Series PNP POWER TRANSISTORS -4 0 -1 0 0 VOLTS -6 AMP, 65 WATTS COMPLEMENTARY TO THE TIP41 SERIES T he TIP42,Series power transistors are designed for use in general purpose amplifier and switching applications.

2T17

Abstract: cdp1806ac GEC 44 3A CDP1805 CDP1805ACE p1806 k4080 1806AC
Contextual Info: G E SOLID STATE 01 i>Ë| 3Û7SDÛ1 QDlbDÛD _ 1800-Series Microprocessors and Microcomputers TERMINAL ASSIGNMENT CLOCK — WAIT -ÊL6ÏS — 0 — SCI — SCO — B7T5 — eus 7 — BUS 6 — BUS 3 — BUS 4 — BUS 3 — BUS 2 — BUS 1 — BUSO —

2N6545

Abstract: 2N6546 2n6546 application note 2n6545 ti
Contextual Info: 3 8 7 5liign-vonage 0 8 1 G EKower S O Lrransisiorb I D S T A_ TE 01 E □1 17200 w^ D u DE"J 3 Ô 7 S D Ô 1 D D 1 7 5 D D 1 2N6542, 2N6544, 2N6545, 2N6546 5*5 —* J • | C File Number 1Ï096 3-, 5-, and 10-A Power-Switching Transistors High-Voltage N-P-N Type for Off-Line Power Supplies and Other

2N6761

Abstract: 2N6762 2N6767 2nc762
Contextual Info: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi

2N3392 equivalent

Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A
Contextual Info: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated

T1IG

Abstract: IAF820 IRF822 1RF822 IRF820 IRF821 IRF823 t 319 sti 5510
Contextual Info: Dl 3875081 G E SOLID 3Ö7SGÖ1 QQ1Ô374 b S T AT E 01E 18 374 - D T-3.9t 11 öianaara Kower M O SFET s IRF820, IRF821, IRF822, IRF823 File N um ber 1581 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode

IRF620

Abstract: IRF621 YT37 IRF622 IRF623
Contextual Info: _ 01 D e | 3fl7SDfll □□10341 18349 d T- 3 8 7 5 0 8 1 G E S O L I D S T A T E _ Standard Power MOSFETs 01E - - IRF620, IRF621, IRF622, IRF623

RFL4N12

Abstract: F-05 RFL4N15 dpsN cpr 04 relay rca solid state Linear
Contextual Info: g £ SOLID STATE □! 3875081 G E SOLID STATE Standard Power MOSFETs DE | 3ô7SDfll 001Ö121 0 | 01E 18121 D - RFL4N12, RFL4N15 File Number N-Channel Enhancement-Mode