| 2N6761 |
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Fairchild Semiconductor
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N-Channel Power MOSFETs, 4.5A, 450V/500V |
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PDF
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141.05KB |
5 |
| 2N6761 |
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General Electric
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
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PDF
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115.61KB |
4 |
| 2N6761 |
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Harris Semiconductor
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Power MOSFET Data Book 1990 |
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PDF
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120.47KB |
4 |
| 2N6761 |
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International Rectifier
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TO-3 N-Channel HEXFETs |
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PDF
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111.14KB |
1 |
| 2N6761 |
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IXYS
|
High Voltage Power MOSFETs |
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PDF
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1.11MB |
12 |
| 2N6761 |
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IXYS
|
High Voltage Power MOSFETs |
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PDF
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1.11MB |
12 |
| 2N6761 |
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Motorola
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European Master Selection Guide 1986 |
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PDF
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38.1KB |
1 |
| 2N6761 |
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Unknown
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Shortform Datasheet & Cross References Data |
Short Form |
PDF
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83.37KB |
1 |
| 2N6761 |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.72KB |
1 |
| 2N6761 |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
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116.76KB |
1 |
| 2N6761 |
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Unknown
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Semiconductor Master Cross Reference Guide |
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PDF
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126.73KB |
1 |
| 2N6761 |
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Unknown
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FET Data Book |
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PDF
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178.99KB |
3 |
| 2N6761 |
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National Semiconductor
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N-Channel Power MOSFETs |
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PDF
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28.59KB |
1 |
| 2N6761 |
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Semelab
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MOS Transistors |
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PDF
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76.03KB |
1 |
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| 2N6761 |
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Semiconductor Technology
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High Voltage MOS Power Field Effect Transistors |
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PDF
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155.17KB |
1 |
| 2N6761 |
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Siliconix
|
MOSPOWER Design Data Book 1983 |
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PDF
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42.59KB |
1 |
