3FL75 Search Results

CA314E

Abstract: CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward
Contextual Info: G E SOLID STATE Dl D E I 3fl75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 “T * H 3 * Z S High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ V g £ matched + 5m V max. ■ Operation from DC to 120 MHz CA 3118AT, T ; CA 3146A E, E

C2688

Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
Contextual Info: Öl E SOLI» STATE 387 508 1 G E SOLID STATE General-Purpose Power Transistors ' DE | 3fl750öl □□173Tb □ X " 01E 17396 " D T ' ?S '- f f " T ' 2 T * ' 1 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786

DF378F

Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
Contextual Info: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

CS05S

Contextual Info: G E SOLID S TA TE 01 D E|3fl75001 0011710 Optoelectronic Specifications T -V /-7 3 1mm Aperture Photon Coupled Interrupter Module H22A1,H22A2,H22A3 T h e G E Solid S tate H 22A Interru p ter M odule is a gallium arse­ nide infrared em itting diode coupled to a silicon p h o totransistor in

4n4001

Abstract: I4N4
Contextual Info: G E SOLID 01 STATE DE~J 3fl750fll DDlltflS 0 optoelectronic specification« 7 W / - Î7 “ ’ MILLIMETERS SVM0OI T T nT T m a k . 8 3B Bag A 7.62 REF. B _ 8 64 C .406 .606 E 6 03 t.Ol 1.78 2 26 G 2.60 2.16 H ,203 306 2.64 K M 16 .381 N P 6.63 ft 2.92 3.43

DG212CJ

Abstract: DG211CJ
Contextual Info: E SOLID STATE DI G 3875081 G E SOLID D E | 3fl75Dfll DDlDflOfl b STATE 01E 10808 D DG211/DG212 DG211/DG212 SPST 4-Channel Analog Switch GENERAL DESCRIPTION FEATURES The DG211 and DG212 are low cost, C M O S monolithic, Q U A D S P S T analog switches. These can be used In gener­

RCA Solid State Power Transistor

Abstract: 2n1700 RFT oscilloscope
Contextual Info: 01 G E SOLI» STATE 3875081 G E SOLID STATE DlF|3fl75Gûl □01734‘ì E 01E 17349 D / - J S '-'/J General-Purpose Power Transistors ' File Num ber 141 Silicon N -P -N * Pow er-Sw itching Transistor

transistor 2n4871

Abstract: 2N4871 2N4870 GET4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14 GET4870
Contextual Info: G E SOLID STATE 3875081 □Ï G E SOLID ]>E~ 3fl75Dfll □□IfiQOM (a STATE U n i j u n c t i o n T r a n s is t o r s a n r l S w it c h e s 01E 18004 D - T 31-21 2N4870,2N4871, GET4870, GET4871 Silicon Unijunction Transistors TO-92 TO-18 The GE/RC A 2 N 4 8 7 0,2N 4 8 71 , and GET4870, GET4871 are

TRANSISTOR 2n697

Abstract: RCA-2N697 2N697 Transistor Data chart QQ170 25C06
Contextual Info: G E SOLID STATE 38 750 81 01 G E SOLID STATE DeT J 3fl750fll 0 0 1 7 0 5 4 3 0 1E 17084 D T -}$ r-l'7 High-Speed Power Transistors_ File Num ber 2N697 16 TERMINAL DESIGNATIONS Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems

MPS-A65

Contextual Info: G E SOLI» STATE Öl 3875081 G E SOLID » F | 3fl75Dfll 0G17TTE S STATE 01E 1 79 92 D T ' I I - Z l Signal Transistors- MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 6 5 is a p lan ar epitaxial passivated P N P

53-06A

Abstract: 2n5306 2N5305
Contextual Info: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are

Silicon unilateral switch

Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
Contextual Info: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers

LM114

Abstract: LM114A LM114AH LM114H AH TRANSISTOR
Contextual Info: E SOLID STATE □1 DE|3fl75Dfll □ □ 11 □ 4Ì LM114/H, LM 114A/AH Monolithic Dual NPN General Purpose Amplifier T-si^ 'sn GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This

2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

GES2904

Abstract: GES2904A GES2905 GES2905A
Contextual Info: G E SOLID STATE 38 75081 Dl G E SOLID STATE i>F|~3fl75Gfll □□17Tb? 01E 17967 D • - Signal Transistors GES2904,04A, GES2905, 05A Silicon Transistors

PCF35N08

Abstract: RFK35N08 RFK35N10
Contextual Info: 3875081 G E SOLID STATE -01 DE 1 • 3fl75Dfll GDiaSDa ¡i I T-ZI'OI Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

TO213AA

Abstract: Silicon Controlled Rectifiers S2700 S2700D S2700M S2700N TO-213AA ss270a
Contextual Info: G E SOLID STATE "5Ì 3875081 G E SOLID STATE D e J 3fl75Qfll 0017721 ? 01E 17721 D T-7S-I3 _ Silicon controlled Rectifiers File Number S2700D, S2700M, S2700N 1627 High Voltage, Medium Current Silicon Controlled Rectifiers TERMINAL DESIGNATIONS For Power Switching, Power Control

RCA-40346

Abstract: rca 40412 40412 rca 40346 40412 rca+40412 RCA 40346
Contextual Info: E SOLID STATE : Öl Ì>F| 3fl75Dai GUITSG'I & |~ Q r ~ y j o $ Hfgh-Voltage Power Transistors File Num ber 2 1 1 40 34 6, 40412 Medium-Power Silicon N-P-N Planar Transistors For H ig h -V o lta g e S w itchin g and L in e a r-A m p lifie r A p plicatio ns

RCA-2N6249

Abstract: 2n62501 2N6250 2N6251 clare mercury relay HGP-I004 2N6249 solid state relay 220V 220V 30A Relay i947
Contextual Info: 3875081 G E SOLID STATE □ 1 DE I 3fl750fll OOlTlfiT L. High-Voltage Power Transistors File Number 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors F or S w itc h in g A p p lic a tio n s in Ind ustrial and C o m m e rc ia l E q u ip m e n t

13001 TRANSISTOR

Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
Contextual Info: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­

Contextual Info: □1 SOLID STATE DE I 3fl75DBl g O l l O ^ 3 01E 11043 3875081 6 E SOLID STATE D J111-J113 N-Channel JFET Switch T -3 S T -M I S ­ FEATURES APPLICATIONS • • • • • Analog Switches • Choppers • Commutators Low Cost Automated Insertion Package

CDP1804

Abstract: CDP6805
Contextual Info: G E SOLID STATE D l D E I 3fl750fll O P l b b ? 1! fi _ :_ CDP68HC68R1, CDP68HC68R2 CMOS 128-Word CDP68HC68R1 and 'rWi>‘ 35 256-Word (CDP68HC68R2) by 8-Bit Static RAMs Product Preview TO P Random-Access Memories (RAMs) -

ITE4391

Contextual Info: DI E SOLI» STATE DE 3fl750fll DD1D17S 1 | 3875081 G E SOLID STATE 2 N 4 3 9 1 -2 N 4 3 9 3 , IT E 4 3 9 1 -IT E 4 3 9 3 G 01E 10978 D 2N4391 - 2N 4393, ITE4391- ITE4393 & N-Channel JFET Switch FEATURES ABSOLUTE MAXIMUM RATINGS • rd5(on <300 Ohms (2N4391)

4541B

Contextual Info: G E SOLID STATE 01 •3 D Ë | 3fl750ûl 0013400 S 3875081 G E SOLID STATE 01E 13408 D T-zt-n CD4541B Types CMOS Programmable Timer A -Í2 - High-Voltage Types 20-Volt Rating B Rtc ~ 7 CTC Features: ■ Low symmetrical output resistance, typically 100CI at