136S6
Abstract: CNY51 DIODE RK 306 TA-100
Contextual Info: G E SOLID STATE □1 Optoelectronic Specifications 3fi750fll oonaso b I DEf T -4 1 -8 3 Photon Coupled Isolator CNY51 19- Ga As Infrared Em itting Diode & NPN Silicon Photo-T ransistor -— The G E Solid State CNY51 consists of a gallium arsenide, infrared
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3fi750fllcny513fl75dfll136s6+2diode rk 306ta-100
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74HC14
Abstract: 74HC14 and 54HC14
Contextual Info: G E SOLID STATE Ql DE F 3fi75Qfll 3 W~ Technical Data CD54/74HC14 CD54/74HCT14 File N u m be r 1781 High-Speed CMOS Logic -O"- Hex inverting Schmitt Trigger Type Features: • U n lim ite d in p u t ris e a n d ta ll tim e s • E x c e p tio n a lly h ig h n o is e im m u n ity
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3fi75qfllcd54/74hc14cd54/74hct1474hct+454hct74hc1474hc14 and54hc14
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OD11DIM
Abstract: 3N161
Contextual Info: G E SOLI» STATE □1 DE J 3fi75Dfll DDllDm 3875081 G E SOLID STATE 7 g 01E 11014 D 7^ J 7-2*- 3N161 Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch ABSOLUTE MAXIMUM RATINGS FEATURES T a = 25'C unless otherwise noted * Channel Cut Off With Zero Gate Voltage
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2N6342A
Abstract: 2N6343A 2N6345A 2N6346A 30367 2N6344A 2N6347A 2N6348A 2N6342A-2N6349A JC22
Contextual Info: G E SOLID STATE □1 01E 17756 3875081 G E SOLID STATE File Number D E | 3fi750Al 0D177SL 4 D T - _ Triacs 1084 2N6342A-2N6349A Series 12-A Silicon Triacs TERMINAL DESIGNATIONS For Pow er Control and Pow er-Sw itching Applications
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0d177sl2n6342a-2n6349a92cs-39970o-220ab+1292ls-2409r492cs-1706392cs-i33m2n6342a2n6343a2n6345a2n6346a303672n6344a2n6347a2n6348ajc22
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2N3859
Abstract: 2N3860 2N3859A 2N3659 2N3858 E1307 2N3868 BA 4213 2N3658 2N3858-60
Contextual Info: SOLI» STATE ÜÏ D E | 3Ö7S0Ö1 D G l T ^ n - Signal Transistors 2N3858-60, 2N3858A, 2N3859A Silicon Transistors TO-98 The GE/RCA 2 N 3 858,2N 3859 and 2N3860 are planar epitaxlal passivated NPN silicon transistors designed primarily for
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2n3858-602n3858a2n3859a2n3858+72n38592n38602n3659e13072n3868ba 42132n3658
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040M1
Contextual Info: 3875081 G E SOLID S T A T E D ! T~33~ 3 DE |3fl7S0fll 0 D l ci4SD 3 HIGH POWER 2N3772 NPN POWER TRANSISTORS 60 VOLTS 20 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch
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MJE16004
Abstract: 690 lc 100-C MJE16002 mje16 80ni
Contextual Info: ~ÔÎ 387 508 1 G E SOLID STATE DE | 3 Ö 7 S D Ö 1 0017000 h 01E 17080 dT- 3 3 - / 3 Sw ftcâM aX Power Transistors. MJE16002, MJE16004 5 - A S w itc h M a jfW File N um ber 1842 P o w e r T r a n s is to r s High-Voltage N-P-N Types for Off-Line Power Supplies
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dt-33mje16002mje160049zcs-39969+5o-220ab690 lc100-cmje1680ni
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Contextual Info: 17E D Radiation-Hardened High-Reliability ICs 3075051 00253 4 b 3 E SOLID STATE GP511/1RZ High-Reliability, Radiation-Hardened, CMOS/SOS High-Speed 8-Bit Bidirectional CMOS/TTL Interface Level Converter FUNCTIONAL DIAGRAM Radiation Features: • Radiation hardened to
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gp511/1rzrca-gp511/1rz92cm-40969gp511 |
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t8292
Contextual Info: G E SOLID STATE 01 Ô F | 3A7S0Û1 □ □ 1 3 3 c10 1 3875081 G E SOLID STATE 01E 13390 T - O I- flS t CD4532B Types CMOS 8-Bit Priority Encoder Features; • Converts from 1 o f 8 to binary High-Voltage Types 20-Volt Rating ■ Provides cascading feature to handle any number o f inputs
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cd4532b20-voltrca-cd4532bcd4532bh+1t8292
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dual 1038 Transistor
Abstract: 2N5118 2N5117 2N5119
Contextual Info: E SOLI» STATE di DE | 3Û7SQÛ1 O O I O W T - z 7 - ï. 7 Dielectrically Isolated Dual PNP General Purpose Amplifier FEA TU R ES A B S O LU T E MAXIMUM RATINGS • High Gain at Low Current 0 a = 25°C unless otherwise noted Collector-Base or Collector-Emitter
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2n5117-2n5119dual 1038 transistor2n51182n5117+12n5119
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transistor 123 DL
Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
Contextual Info: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current
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2n60272n6028ges6027ges6028+1192cs-4234transistor 123 dlequivalent transistor of 2n6027ge 2n6027transistor put 2n6028ujt 2n6027put 2n60282n6027 as put oscillatorput 2n6027programmable unijunction transistorscr control by put circuit
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Contextual Info: STATE 01 De | 3675051 □□10Hb0_b_ 3875081 G E SOLID STATE 0 1 E 10 2 60 31 /4-Digit LCD/LED Single-Chip A/D Converter with Display Hold T-5/-/D ’ 05 GENERAL DESCRIPTION FEATURES The Intersil ICL7116 and 7117 are high performance, low power 3 -V2 digit A/D converters. All the necessary active
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4392
Abstract: 2N4393 2N4391-93 2N4392 4392 dl 2N4391 ITE4393 ITE4392
Contextual Info: 01 G E SOLI» STATE DE 13fl?50fll D01DT7Ô °ì | 3875081 G E SOLID STATE 01E 10978 S 2N4391- 2N4393, S ITE4391- ITE4393 T- 35 - 2.5 7 N-Channel JFET Switch « n + u fc ri ABSOLUTE MAXIMUM RATINGS FEATURES • rd s o n < 3 0 0 D (Ta = 25°C unless otherwise noted)
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3fl750fll2n4391-2n4393ite4391-+9ite4393100pa10vac2n43922n439343922n4391-934392 dlite4392
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CA3046 RCA
Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6
Contextual Info: D E | 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies
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ca3045ca304692cs-k256h192cs-isi96+8ca3046 rcaican-5296ca304brca-ca3018rca ca3046llamca3045f92cs-i52i6
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CD4028B
Abstract: B4071 2cw code
Contextual Info: G E SOLID STATE Dl D E | 3Ö7SG01 QG131flfl L. | T 'G 7 - f / S f CD4028B Types CMOS BCD-to-Decimal Decoder High-Voltage Types 20-Volt Rating The RCA-CD4028B types are BCD-todecimal or bina'ry-to-octal decoders consist ing o f buffering on all 4 inputs, decodinglogic gates, and 10 output buffers. A BCD
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7sg01qg131flflcd4028bcd4028bh+2b40712cw code
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gp501
Abstract: MF71 GPS01 mxl10 GP001 EPIC PCODE bit-slice RCA-GP501 "RCA Solid State" application GP001
Contextual Info: G E SO LI D ST AT E • 17E D 3075001 00252=11 4 ■ . Radiation-Hardened High-Reliability ICs GP501A/1RZ Advance Information High-Reliability, Radiation-Hardened Emulating Controller Aerospace Class S Screening Features: ■ Provides efficient implementation o f computer
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gp501a/1rz13-bit10-bit40-mil+10gp501mf71gps01mxl10gp001 epicpcodebit-slicerca-gp501rca solid state" applicationgp001
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Contextual Info: G E SOLID STATE 17E D • 3S7SQS1 0055522 6 T W P i 'O C s * SECTION 1 INTRODUCTION 1.1 GENERAL The C D P 68H C 05C 4 H C M O S M icrocom puter is a m em ber of the C D P 68H C 05 Fam ily of low-cost single-chip microcomputers. This 8-bit m icrocom puter contains an on-chip
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GP503
Abstract: A750F ST l 9143
Contextual Info: 1 ?E D Radiation-Hardenedd High-Reliability ICs _ _ • ^ 3 fl7 S0 â l ^ SOLID 0 0 5 S3 E4 4 STATE GP503/1RZ Advance Information T - ^ - Z 0\ High-Reliability, Radiation-Hardened C M O S/SO S 8 x 8-Bit Expandable Multiplier Aerospace Class S Screening
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Contextual Info: G E SOLID STATE 17E D • 3575061 0024203 T ■ _ TechnicalData CD54/74AC14 CD54/74ACT14 Advance Information T A Z 'Z X Hex Inverting Schmitt Trigger Type Features: ■ Operates with much slower than standard input rise and fall slew rates
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cd54/74ac14cd54/74act14cd74ac14cd74act14+314-leadcd54/74accd54/74act
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IRF641
Abstract: IRF643 IRF841 PFC55
Contextual Info: El 3875081 d F | 3ö7SDöi DaiagsT a |~ G E SOLID Standard Power M O S FE T s STATE 01E 1 8 3 59 D IRF641, IRF643 F ile N u m b e r 1585 Power MOS Field-Effect Transistors
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2N6788
Contextual Info: 387 5081 G E SOLID STATE Standard Power MOSFETs D1 _ D E1 | 3875081 00 1 8 4 13 1 2N6788 File Num ber 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL E N H A N C EM EN T M O DE 6 .0 A , 100V
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2n6788 |
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PC 74HC139
Abstract: 74hc139
Contextual Info: G E SOLID STATE D1 Technical D a ta - DE~| 3075001 DGllSbl 3 ï D T “6>áj-ai-‘5'5" — . CD54/74HC139 CD54/74HCT139 File N u m b e r 1545 High-Speed CMOS Logic Dual 2-to-4 Line Decoder/Demultiplexer AO 2 tl4 Typ e Features: • M ultifunction Capability
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cd54/74hc139cd54/74hct139cd74hc/hct54/74hc+354/74hctpc 74hc13974hc139
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