3FI750FLL Search Results

136S6

Abstract: CNY51 DIODE RK 306 TA-100
Contextual Info: G E SOLID STATE □1 Optoelectronic Specifications 3fi750fll oonaso b I DEf T -4 1 -8 3 Photon Coupled Isolator CNY51 19- Ga As Infrared Em itting Diode & NPN Silicon Photo-T ransistor -— The G E Solid State CNY51 consists of a gallium arsenide, infrared

040M1

Contextual Info: 3875081 G E SOLID S T A T E D ! T~33~ 3 DE |3fl7S0fll 0 D l ci4SD 3 HIGH POWER 2N3772 NPN POWER TRANSISTORS 60 VOLTS 20 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch­

MJE16004

Abstract: 690 lc 100-C MJE16002 mje16 80ni
Contextual Info: ~ÔÎ 387 508 1 G E SOLID STATE DE | 3 Ö 7 S D Ö 1 0017000 h 01E 17080 dT- 3 3 - / 3 Sw ftcâM aX Power Transistors. MJE16002, MJE16004 5 - A S w itc h M a jfW File N um ber 1842 P o w e r T r a n s is to r s High-Voltage N-P-N Types for Off-Line Power Supplies

transistor 123 DL

Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
Contextual Info: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current

4392

Abstract: 2N4393 2N4391-93 2N4392 4392 dl 2N4391 ITE4393 ITE4392
Contextual Info: 01 G E SOLI» STATE DE 13fl?50fll D01DT7Ô °ì | 3875081 G E SOLID STATE 01E 10978 S 2N4391- 2N4393, S ITE4391- ITE4393 T- 35 - 2.5 7 N-Channel JFET Switch « n + u fc ri ABSOLUTE MAXIMUM RATINGS FEATURES • rd s o n < 3 0 0 D (Ta = 25°C unless otherwise noted)

RFM6N45

Abstract: RFM6N50 RFP6N45 RFP6N50
Contextual Info: Hi 3875081 G E SOLID 3fl7SGfll DOIAIS^ 4 T STATE Standard Power MOSFETs 01E 18129 D r-3 ? -// -_ •39-/3 RFM6N45.RFM6N50, RFP6N45, RFP6N50 File N u m b e r 1494 Power MOS Field-Effect Transistors TERMINAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: G E SOLID STATE 17E D • 3S7SQS1 0055522 6 T W P i 'O C s * SECTION 1 INTRODUCTION 1.1 GENERAL The C D P 68H C 05C 4 H C M O S M icrocom puter is a m em ber of the C D P 68H C 05 Fam ily of low-cost single-chip microcomputers. This 8-bit m icrocom puter contains an on-chip

GP503

Abstract: A750F ST l 9143
Contextual Info: 1 ?E D Radiation-Hardenedd High-Reliability ICs _ _ • ^ 3 fl7 S0 â l ^ SOLID 0 0 5 S3 E4 4 STATE GP503/1RZ Advance Information T - ^ - Z 0\ High-Reliability, Radiation-Hardened C M O S/SO S 8 x 8-Bit Expandable Multiplier Aerospace Class S Screening

2N6788

Contextual Info: 387 5081 G E SOLID STATE Standard Power MOSFETs D1 _ D E1 | 3875081 00 1 8 4 13 1 2N6788 File Num ber 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL E N H A N C EM EN T M O DE 6 .0 A , 100V

PC 74HC139

Abstract: 74hc139
Contextual Info: G E SOLID STATE D1 Technical D a ta - DE~| 3075001 DGllSbl 3 ï D T “6>áj-ai-‘5'5" — . CD54/74HC139 CD54/74HCT139 File N u m b e r 1545 High-Speed CMOS Logic Dual 2-to-4 Line Decoder/Demultiplexer AO 2 tl4 Typ e Features: • M ultifunction Capability