39DBM Search Results

9421

Abstract: FPD2250SOT89
Contextual Info: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

Bond

Abstract: power amplifier mmic
Contextual Info: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four

Bach

Abstract: Eudyna Devices X BAND power amplifiers power amplifier 800mA ED-4701 FMM5829X UF 600m power amplifier mmic
Contextual Info: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four

Contextual Info: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION

EIA1415-8P

Abstract: 7371711
Contextual Info: Excelics EIA1415-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.4-15.35GHz, 8W Internally Matched Power FET • • • • • 14.4-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

AM357039UM-2H

Contextual Info: Power Amplifier Module 3.5 – 7.0GHz, 21dB, 8W AM357039UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM357039UM-2H is a broadband GaAs Power Amplifier Module. It has a nominal CW performance of 21dB small signal gain, and 39dBm 8W saturated output power

EMM5840X

Abstract: Harbour Industries UTC 393
Contextual Info: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION

Contextual Info: Coaxial ZHL-03-5WF+ ZHL-03-5WF High Power Amplifier 50Ω 5W 60฀to฀300฀MHz Features •฀High฀power,฀+39dBm฀typ. •฀Low฀noise฀igure,฀3฀dB฀typ. •฀High฀IP3,฀+49฀dBm฀typ. •฀Class฀A฀ampliier •฀Availabe฀with฀built-in฀fan฀with฀thermal฀shut-off

Contextual Info: Coaxial High Power Amplifier 50Ω 5W ZHL-03-5WF+ 60 to 300 MHz Features • • • • • High power, +39dBm typ. Low noise figure, 3 dB typ. High IP3, +49 dBm typ. Class A amplifier Availabe with built-in fan with thermal shut-off Model No. Case Style

ZHL-03-5WF

Contextual Info: Coaxial High Power Amplifier 50Ω 5W ZHL-03-5WF 60 to 300 MHz Features • High power, +39dBm typ. • Low noise figure, 3 dB typ. • High IP3, +49 dBm typ. • Class A amplifier • Availabe with built-in fan with thermal shut-off Model No. Case Style Connectors

EIA1314A-8P

Contextual Info: Excelics EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER

power amplifier mmic

Contextual Info: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION

GaAs FETs

Contextual Info: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz

MC2006

Abstract: MC2006WAFER MC2006DIE
Contextual Info: PIN Pre-amplifier MC2006 CMOS PIN Pre-amplifier with AGC for long-reach fiber-optics based 155Mbps ATM/SONET Main Features: General Description: Min. -39dBm sensitivity, +3dBm saturation at 155Mbps when used with 0.9A/W InGaAs PINs. BER 10-10 . Fabricated in standard high-volume CMOS

FLM5359-8C

Abstract: flm5
Contextual Info: FLM5359-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

60465

Abstract: AE51 smd mmic transistor E5 AE514 60465A 702 smd 37dBmV
Contextual Info: AE514 Preliminary E-pHEMT MMIC Product Features Application 0B 1B • Small size • Higher Gain • Higher linearity • SOIC-8 SMD Type package • Higher productivity • Lower manufacturing cost • -70dBc CSO 79 Channels @ +39dBmV/ch • -63dBc CTB 79 Channels @ +39dBmV/ch

Contextual Info: FLM7785-8D FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 26% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: Filmali FLM3742-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P1dB = 39dBm Typ. High Gain: G1dB = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM3742-8E m frT C II r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q

FLM7177-8C

Contextual Info: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

ZHL-03-5WF

Contextual Info: Coaxial High Power Amplifier 50Ω 5W ZHL-03-5WF 60 to 300 MHz Features • High power, +39dBm typ. • Low noise figure, 3 dB typ. • High IP3, +49 dBm typ. • Class A amplifier • Availabe with built-in fan with thermal shut-off Model No. Case Style Connectors

EGN21A045IV

Abstract: hpa L-band 27 31 GHz HPA GaN amplifier
Contextual Info: Eudyna GaN-HEMT 45W Preliminary EGN21A045IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=39dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz

TA099-107-41-40

Contextual Info: TA099-107-41-40 PRE1_20040412 9.9 - 10.7 GHz 10W Amplifier FEATURES • • • • P-1dB: 39dBm Small Signal Gain: 42dB TTL Control Power Turn ON/OFF: 1ìS Bias Condition: 7A @ 12V DESCRIPTION The TA099-107-41-40 is a 10W power amplifier designed for high linearity applications in the 9.9 to