34DBC Search Results

MAMO-000900-1291HT

Abstract: MAMO-000900-1291MT
Contextual Info: MAMO-00900-1291HT I/Q Modulator/Demodulator 850-960 MHz Rev. V3 Features • • • • • • • Excellent Carrier Suppression ~34dBc 6.0 dB Typical Modulator Conversion Loss +17 to +20 dBm LO Drive High 3x1 and 5x1 Harmonic Suppression No External Matching Required

Contextual Info: 2nd 3rd Harmonic vs Pout MAX3509 22MHz 2:1 Pin=33,34,35dBmV 70 65 60 dBc 55 34dBc2 34dBc3 35dBc2 35dBc3 33dBc2 33dBc3 50 45 40 35 30 57 58 59 60 61 62 63 64 Pout dBmV 65 66 67 68 69 70 71

MAX2150

Abstract: MAX2150ETI J103 transistor 3 pin cpx 1uF TEW 20MHZ Crystal
Contextual Info: 19-2389; Rev 0; 4/02 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer Features ♦ Single Voltage Supply 2.7V to 3.6V The device typically achieves 34dBc of carrier and sideband suppression at a -1dBm output level. The wideband, internally matched RF output can also

MAX2150

Abstract: TCXO 40MHz TEW 20MHZ Crystal MAX2150ETI wideband DAC modulator 2.5 GHz
Contextual Info: 19-2389; Rev 1; 8/03 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer Features ♦ Single Voltage Supply 2.7V to 3.6V The device typically achieves 34dBc of carrier and sideband suppression at a -1dBm output level. The wideband, internally matched RF output can also

Contextual Info: 2nd 3rd Harmonics vs. Pout MAX3509 65MHz 2:1 Pin=33, 34, 35dBmV 70 65 60 dBc 55 34dBc2 34dBc3 33dBc2 33dBc3 35dBc2 35dBc3 50 45 40 35 30 57 58 59 60 61 62 63 64 Pout dBmV 65 66 67 68 69 70 71

ic 4800b

Abstract: 4800b max 4800b smd ic 4800b transistor circuit diagram of 4800b 4800b ic 4800B smd 4800B POWER IC max 4800b CIRCUIT 4800b
Contextual Info: TSH690 40MHz to 1GHz AMPLIFIER • ■ ■ ■ ■ ■ ■ Supply voltage: 1.5V to 5V >20 mW adjustable output power 28 dB gain at 450 MHz 21 dB gain at 900 MHz 50 Ω matched input and output Bias pin to adjust the amplification class Power down PACKAGE

QFN-48 pin 49

Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

UMLC1111B

Abstract: UMLC1-111B UMLC1
Contextual Info: 中国3G TD-SCDMA用 RF模块 UMLC1-111B ! 0.18ml微型模块将推进 世界首创 中国的 3G。 13mm W: 9mm D: 1.5mm H: 采用仿真技术对配套IC进行了优化，能控制散差，发挥稳定的性能。 ●适应3GPP TS25.102 Power Class 2（+24dBm）。

ic 4800b

Abstract: 4800B max 4800b smd ic 4800b ic 4800b transistor 4800B datasheet circuit diagram of 4800b max 4800b 4800B smd 4800B datasheet smd
Contextual Info: TSH690 40MHz to 1GHz AMPLIFIER • ■ ■ ■ ■ ■ ■ Supply voltage: 1.5V to 5V >20 mW adjustable output power 28 dB gain at 450 MHz 21 dB gain at 900 MHz 50 Ω matched input and output Bias pin to adjust the amplification class Power down PACKAGE DESCRIPTION

qualcomm msm 8660

Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
Contextual Info:
       
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CA942

Abstract: 48V dc supply GSM LNA LINE FILTER FOR 900MHZ GSM900 base station high power amplifier Filtronic comtek
Contextual Info: CA942 GSM900, 6 Channel In-Line Uplink Enhancer FEATURES • High linearity • Low noise contribution • High reliability • High return loss • Available as RoHS compliant Inspired Wireless Solutions BENEFITS • Reduces dropped calls in rural areas by

AN1737

Abstract: APP1737 MAX2510 MAX5183 i q modulator
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, wireless, modulator, if, lo, dac, rfic, rf ics Sep 19, 2002 APPLICATION NOTE 1737 MAX2510 I/Q Modulator Performance In The Presence of DC Offset Voltages Abstract: RF systems which require direct coupling between the baseband output DAC and the input to the I/Q

8593E

Abstract: AN0001 AN1892 RF2422
Contextual Info: AN0001 15 AN0001 Optimization of Quadrature Modulator Performance Optimization of Quadrature Modulator Performance Introduction Quadrature modulators are common building blocks in a communications link. By their nature they are capable of sending virtually any modulation scheme. They can send both analog, such as AM and FM, and digital modulation schemes,

Contextual Info: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7011 FEATURES Single Chip Low Power UHF Transmitter Frequency Band 433 MHz to 435 MHz 868 MHz to 870 MHz On-Chip VCO and Fractional-N PLL 2.3 V to 3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps

031pf

Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

le817

Abstract: DB4 antenna uhf CRYSTAL 22.1184 DFCB2869MLEJAA-TT1 UHF DETECTOR F1-F11 sharp UHF modulator 433mhz rf power amplifier 500 mw 42368 ADF7011BRU-REEL
Contextual Info: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7011 FEATURES Single Chip Low Power UHF Transmitter Frequency Band 433 MHz to 435 MHz 868 MHz to 870 MHz On-Chip VCO and Fractional-N PLL 2.3 V to 3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps

AN1997

Abstract: APP1997 MAX2510
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Apr 28, 2003 Keywords: rf, phs, transceiver, wireless, rfic, spectrum APPLICATION NOTE 1997 500mW PHS Transmitter Meets Transient Spectrum Requirements with Edge Control Abstract: If the control signal's transition time is not controlled, the output spectrum of a 500mW PHS base

marking 7W 66

Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15

IEC802

Abstract: 188g
Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

MAX2150

Abstract: MAX2150ETI J1014 TEW 20MHZ Crystal
Contextual Info: 19-2389; Rev 4; 6/08 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer The MAX2150 is a complete wideband direct upconversion quadrature modulator IC incorporating a 28-bit sigma-delta fractional-N synthesizer. The device is targeted for applications in the 700MHz to 2300MHz frequency range.

RD07MUS2B

Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

MAX2150

Abstract: MAX2150ETI J1017
Contextual Info: 19-2389; Rev 3; 3/06 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer The MAX2150 is a complete wideband direct upconversion quadrature modulator IC incorporating a 28-bit sigma-delta fractional-N synthesizer. The device is targeted for applications in the 700MHz to 2300MHz frequency range.

Contextual Info: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7010 a FEATURES Single Chip Low Power UHF Transmitter 902 MHz–928 MHz Frequency Band On-Chip VCO and Fractional-N PLL 2.3 V–3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps

bsim3 model

Abstract: 1000 watt power supply scheme class E power amplifier Class E amplifier capacitor huang bsim3 ADS GSM Transceiver chip single transistor amplifier circuits bsim3 27 Mhz power amplifier
Contextual Info: Chapter 6 CMOS Class-E Power Amplifier 6.0 Introduction Last few years have seen an increase in the popularity of the wireless communication systems. As a result, the demand for compact, low-cost, and low power portable transceivers has increased dramatically [Gray and Meyer, 1995]. A proposed