3402 TRANSISTOR Search Results

pc usb gamepad architecture

Abstract: psp joystick usb gamepad controller circuit diagram for joystick to USB 0X00 CY7C63100 CY7C63100-SC CY7C63101 CY7C63101-SC
Contextual Info: fax id: 3402 1CY 7C63 00 0 PRELIMINARY CY7C63100/CY7C63101 CY7C63100 CY7C63101 Universal Serial Bus Microcontroller Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 October 1996 - Revised March 4 , 1997

Contextual Info: D O D -H -4522 ! 1/26 NEC TFT COLOR LCD MODULE Type: NL10276AC28-01 36cm 14.1 Type , XGA SPECIFICATIONS PRELIMINARY This docum ent is preliminary. All information in this docum ent are subject to change without prior notice. The former specification (DO D -H-3402, issued Feb. 21, 1996) shall be abandoned.

SIT Static Induction Transistor

Abstract: sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30
Contextual Info: NEW PRODUCTS UPDATE T O K lii Small-sized Static Induction Transistor SIT with high withstand voltage 'T - S I - i', led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high

tuner 3402

Abstract: TRANSISTOR SMD MARKING 2 HA SDA34 XP113 smd transistor marking P7
Contextual Info: bSE D • ÔE 3 S b OS 0G53554 774 WÊSIZG S IE M E N S SIEMENS A K T I EN GE SE LLS CH AF; GHz PLL with I 2C Bus, In-Lock Detector and four programmable Chip Addresses SDA 3402X Bipolar 1C Preliminary Data Features • 1 - chip system for MPU control I2C bus

DSB010

Abstract: DSD010 DSC010 2sa1571 2SK1375 DSA010 CAPACITOR MICROPHONE 2SC4146 2SC4047 2SC4066
Contextual Info: Ordering number: EN 5324A No.5324A SAßiYO Notification of the Designation of Maintenance and Obsolete Discrete Devices Affected Products : Products listed below Thank you for your continued use of SANYO semiconductor products. This notice announces the designation of maintenance and obsolete SANYO semiconductor products. Please make

T092A

Abstract: T0-92A 2N5451 2N3402 AP 3706 P MPS3704 equivalent 2N5702 2N3404 MPS3704 2N3417 equivalent
Contextual Info: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2NJ702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN

MTP2N85

Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85
Contextual Info: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 | F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

TA9291

Abstract: RFP8N20 36161 RFM8N18 RFM8N20 RFP8N18 2csm
Contextual Info: Standard Power M O S F E T s _ RFM8N18, RFM8N20, RFP8IM18, RFP8N20 File N um ber 1447 N-Channel Enhancemient-Mode Power Field-Effect Transistors 8 A, 180 V — 200 V o rDs on : 0.5 O Features: • ■ m m m SOA is power-dissipation lim ited

2N3900A

Abstract: 2N3900A equivalent 2N3404 2N2924 equivalent n3860 NTE377 2N2711 2N2712 2N2713 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10m A V V CE hF E M in.-M ax. @ I c , V 2N 2 7 1 1 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained

2N3662

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

Si9804DV

Abstract: LT1619 LTC1872 LT1009 LT1714 LTC1473L LTC1608 LTC3401 LTC3402 MS10
Contextual Info: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products November 2000 Product of the Month Tiny, Current Mode Boost DC/DC Converters for Loads Up to 10A—LTC3401/LTC3402/LTC1872/ LT1619 Four new switching regulator ICs provide boost voltage conversion in very small

2N2926

Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN

BUT14

Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Contextual Info: MOTOROLA SC XSTRS/R F la E D | 33t3755 M OOflMaM1! fa | MOTOROLA S E M IC O N D U C T O R BUT14 TECHNICAL DATA 25 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 850 VOLTS

ALY TRANSISTOR

Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

2N3643

Abstract: 2N3844 transistor 2N3 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

2n3901 equivalent

Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN

2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308
Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter

Lautsprecher LP

Abstract: transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028
Contextual Info: T E C H N I S C H E DO KU MEN TA TI ON Progrom m geberleil Pr T 801 Z.Nr 8721BOI—00001 . . 1 2 Bestückung und Zubehör t 1* 2.1 Beatüokung des Pr-T 801 01 (von oben linke)» Funktion 1.2.1.1. 1.2.1.2. 1.2.1*3* 1.2.1.4. 1.2.1*5. 1.2*1»S. 1.2.1.7. 1.2.1.8.

2n3901 equivalent

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390

AN793

Abstract: ADuM1201 application ADuM2400 HCPL-0631 ADuM240x Analog Devices iCoupler vs. Optocoupler ADUM1400 ADUM1411 ADuM1201 ADUM1210
Contextual Info: The World Leader in High Performance Signal Processing Solutions iCoupler® Isolation Technology March 2007 iCoupler Technology – Advancing Beyond Optocouplers Integration Integration ‹ ‹ Performance Performance ‹ ‹ Power Power Consumption Consumption

2N3855

Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926