33CN Search Results

33CN10N

Abstract: IPP35CN10N 34cn
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

DIODE D27

Abstract: 2SC3115-TBD27 35CN10N
Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

Contextual Info: APT10M07JVR ADVANCED P o w er T echn olo gy 225A 0.0070 - io o v POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

5v smd stepdown regulator ic

Abstract: adjustable pwm voltage regulator 3V REGULATOR SOT89 smd 25v 12v 1A regulator 3.3v out SMD 6 PIN IC FOR PWM AIC1594 regulator 712 AIC1594-33 ANALOG INTEGRATIONS CORPORATION SMD Step-Down Voltage Regulator
Contextual Info: AIC1594 ADVANCED INFORMATION 1A STEP-DOWN PWM REGULATOR SPEC NO: DS-1594-P1 03/23/00 ! DESCRIPTION ! FEATURES " " " " " " " " " " " Operating Input Voltage From 4.5V to 36V 2.5V, 3.3V, 5V , 12V and Adjustable Output Version Adjustable Version Output Voltage Range , 1.25V

nzm4 -XR

Abstract: NZM10 NZMN3-AE400 nzm3 -XR NZMN3-AE630 moeller VDE 0660 nzm1 60947-3 NZMN4-AE630 moeller circuit breaker nzm3 NZMH3-AE400 moeller IZM 324 - 2000
Contextual Info: Product Range Catalogue | 2006 Switching, protection, communication – the new NZM1-4 circuit-breaker series up to 1600 A Reliable and safely controlling, switching and managing power. In industry, in buildings and in machine construction. Innovative protection concepts.

Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

TRANSISTOR BC 208

Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
Contextual Info: 17E D TELEFUNKEN ELECTRONIC m fi^QO^b QDQRMSR • ALGG BU 208 D ■ffmewraiH! electronic Crtativ« TKhnot6g<e9 r-33-c? Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In colour TV-receivers Features: • Monolithic integrated inverse diode

33cn10n

Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)

Contextual Info: A dvanced O D po w er Te c h n o l o g y APT5025BNR 500V 23.0A 0.25Í2 APT5030BNR 500V 21,0A 0.30Í2 Ô S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT30M85BVR A dvanced P o w er Te c h n o l o g y 300V 40A 0.085Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

4F smd transistor

Abstract: smd transistor 901 pin configuration pnp smd transistor SOP8 PNP Transistor Package 5 PIN, Switching Regulator or Controller NV SMD TRANSISTOR SMD Step-Down Voltage Regulator 5v smd stepdown regulator ic 3.3V regulator sot89*5 AIC1593XXXCX
Contextual Info: AIC1593 ADVANCED INFORMATION EXTERNAL PMOS STEP-DOWN PWM CONTROLLER SPEC NO: DS-1593-P1 03/24/00 ! DESCRIPTION ! FEATURES " " " " " " " " " Operating Input Voltage From 4.5V to 36V 2.5V, 3.3V, 5V , 12V and Adjustable Output Version Adjustable Version Output Voltage Range , 1.25V