34CN Search Results

Contextual Info: L FASCO INDS/ SENISVS 40E D Si 34cn 7 3 a □□012b2 T S S E N X 1 Features Absolute Maximum Ratings*1' T a = 25°C unless otherwise stated. • • • • Storage +85*C

OPTO ISOLATOR TL

Abstract: CLA60 CLA60AA CLA60AB LA60AB
Contextual Info: 34cn 7 3 ô GQQ10Ô1 S E1SENI 4GE D FASCO INDS/ SENISYS CLA60 Transistor Output High Voltage Axial Lead Isolators GENERAL DESCRIPTION — The Clairex CLA60 series axial lead optoisolators are designed for applications re­ quirin g herm eticity and high voltage isolation. The

Contextual Info: 40E D • 34cn73 a 0001035 ^ HSENI FASCO INDS/ SENISYS CLED405 | Gallium Aluminum Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The Clairex CLED405 is a super high intensity infrared emitting diode molded in a clear epoxy package. Its molded lens provides a controlled

Contextual Info: 40E D 3 4 clc173a 0001222 & ^ S E N I T -m EE2I3I3I R-200/205 Series Reflective Optical Switches FASCO INDS/ SENISYS oo : i i DIMENSIONS ARE IN INCHES CHILLIHETERS1 0.390 £9.911 0.365 £9271 0.066 £1.68] e TYD 0.058 £1.47] *• ,TK 0.210 £5.33] . 0.190 £4.831 ^

33CN10N

Abstract: IPP35CN10N 34cn
Contextual Info: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
Contextual Info: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

Contextual Info: PC Card Socket Connectors PC Card Slot Connectors ICM Series ICM series connectors are 1.27mm pitch dual row, high density 68 position PC card connectors com­ pliant with JEIDA Japan Electronic Industry Development Association and PCMCIA (Personal Com ­

Contextual Info: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
Contextual Info: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: D27D27 33cn10 IPD33CN10N
Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)