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    ECS International Inc ECX-L35CN-100.000-TR

    Crystal Oscillator 100MHz 3.3V 6-Pin SMD T/R - Tape and Reel (Alt: ECX-L35CN-100.000-TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ECX-L35CN-100.000-TR Tape & Reel 17 Weeks 1,000
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    • 1000 $3.57
    • 10000 $3.21
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    HeliCoil 4184-3.5CN105

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DB Roberts 4184-3.5CN105
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    Infineon Technologies AG IPP35CN10NG

    Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPP35CN10NG 8,266
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    Infineon Technologies AG IPI35CN10NG

    Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPI35CN10NG 5,398
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    35CN10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    33CN10N

    Abstract: IPP35CN10N 34cn
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+4pg-to263-3pg-to252-333cn10n34cn PDF

    DIODE D27

    Abstract: 2SC3115-TBD27 35CN10N
    Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb35cn10nipi35cn10nipp35cn10nipd33cn10n+4ipu33cn10ndiode d272sc3115-tbd2735cn10n PDF

    33CN10N

    Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+4iec61249-2-21pg-to263-333cn10nipb34cn10n g PDF

    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+2iec61249-2-21pg-to263-3 PDF

    33CN10N

    Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+9pg-to263-3pg-to252-333cn10nto262 pcb footprintipd33cn34cn33cn1034cn10n35cn10 PDF

    33cn10n

    Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
    Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb35cn10nipi35cn10nipd33cn10nipp35cn10n+8ipu33cn10n33cn10ndiode d27d27d2735cn10nd804marking 27.a2sc3115-tbd27 PDF

    33CN10N

    Abstract: D27D27 33cn10 IPD33CN10N
    Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipp35cn10nipd33cn10n+4ipu33cn10n33cn10nd27d2733cn10 PDF