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    Infineon Technologies AG IPD33CN10NGATMA1

    Trans MOSFET N-CH 100V 27A 3-Pin TO-252 - Tape and Reel (Alt: IPD33CN10NGATMA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IPD33CN10NGATMA1 Tape & Reel 50,000 20 Weeks 2,500
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    • 10000 $0.31
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    Newark IPD33CN10NGATMA1 Bulk 2,265 1
    • 1 $1.89
    • 10 $1.20
    • 100 $0.80
    • 1000 $0.62
    • 10000 $0.59
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    Rochester Electronics IPD33CN10NGATMA1 14,813 1
    • 1 -
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    • 100 $0.55
    • 1000 $0.46
    • 10000 $0.41
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    TME IPD33CN10NGATMA1 2,500
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    • 100 -
    • 1000 -
    • 10000 $0.40
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    EBV Elektronik IPD33CN10NGATMA1 18 Weeks 2,500
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    Win Source Electronics IPD33CN10NGATMA1 10,000
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    • 100 $0.99
    • 1000 $0.66
    • 10000 $0.66
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    ECS International Inc ECX-L33CN-100.000-TR

    Crystal Oscillator 100MHz 3.3V 6-Pin SMD T/R - Tape and Reel (Alt: ECX-L33CN-100.000-TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ECX-L33CN-100.000-TR Tape & Reel 17 Weeks 1,000
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    • 1000 $3.57
    • 10000 $3.21
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    Infineon Technologies AG IPD33CN10NG

    Trans MOSFET N-CH 100V 27A 3-Pin(2+Tab) DPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IPD33CN10NG 348 1
    • 1 $0.75
    • 10 $0.75
    • 100 $0.28
    • 1000 $0.24
    • 10000 $0.24
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    Win Source Electronics IPD33CN10NG 19,995
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    • 100 $0.86
    • 1000 $0.57
    • 10000 $0.57
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    Infineon Technologies AG IDP33CN10NG

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IDP33CN10NG 18 1
    • 1 $3.00
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
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    Infineon Technologies AG IPD33CN10NGBUMA1

    Power Field-Effect Transistor, 27A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPD33CN10NGBUMA1 9,023
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    33CN10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    33CN10N

    Abstract: IPP35CN10N 34cn
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+4pg-to263-3pg-to252-333cn10n34cn PDF

    DIODE D27

    Abstract: 2SC3115-TBD27 35CN10N
    Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb35cn10nipi35cn10nipp35cn10nipd33cn10n+4ipu33cn10ndiode d272sc3115-tbd2735cn10n PDF

    33CN10N

    Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+4iec61249-2-21pg-to263-333cn10nipb34cn10n g PDF

    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+2iec61249-2-21pg-to263-3 PDF

    33CN10N

    Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipd33cn10nipp35cn10n+9pg-to263-3pg-to252-333cn10nto262 pcb footprintipd33cn34cn33cn1034cn10n35cn10 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    33cn10n

    Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
    Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb35cn10nipi35cn10nipd33cn10nipp35cn10n+8ipu33cn10n33cn10ndiode d27d27d2735cn10nd804marking 27.a2sc3115-tbd27 PDF

    33CN10N

    Abstract: D27D27 33cn10 IPD33CN10N
    Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		ipb34cn10nipi35cn10nipp35cn10nipd33cn10n+4ipu33cn10n33cn10nd27d2733cn10 PDF