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Infineon Technologies AG


Infineon Technologies AG IPP35CN10N-G MOSFET N-CH 100V 27A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP35CN10N-G	Tube			500	1 - 10 - 100 - 1000 $0.69 10000 $0.69	Buy Now
Infineon Technologies AG IPI35CN10N-G MOSFET N-CH 100V 27A TO262-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPI35CN10N-G	Tube			500	1 - 10 - 100 - 1000 $0.71 10000 $0.71	Buy Now
Infineon Technologies AG IPI35CN10NG Discontinued
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPI35CN10NG		2,261			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPP35CN10NG Discontinued
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPP35CN10NG		1,813			1 - 10 - 100 - 1000 - 10000 -	Get Quote

35CN10N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
33CN10N Abstract: IPP35CN10N 34cn Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N 34cn	PDF
DIODE D27 Abstract: 2SC3115-TBD27 35CN10N Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	IPB35CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N DIODE D27 2SC3115-TBD27 35CN10N	PDF
33CN10N Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 33CN10N IEC61249-2-21 IPB34CN10N G	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)	Original	IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3	PDF
33CN10N Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N to262 pcb footprint IPD33CN 34cn 33cn10 34CN10N 35CN10	PDF
33cn10n Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27 Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	IPB35CN10N IPI35CN10N IPD33CN10N IPP35CN10N IPU33CN10N 33cn10n DIODE D27 D27D27 35CN10N d804 marking 27.A 2SC3115-TBD27	PDF
33CN10N Abstract: D27D27 33cn10 IPD33CN10N Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	IPB34CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N 33CN10N D27D27 33cn10	PDF