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Infineon Technologies AG


Infineon Technologies AG IPP35CN10NG Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPP35CN10NG		8,266			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPI35CN10NG Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPI35CN10NG		5,398			1 - 10 - 100 - 1000 - 10000 -	Get Quote

35CN10N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
33CN10N Abstract: IPP35CN10N 34cn Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	ipb34cn10n ipi35cn10n ipd33cn10n ipp35cn10n +4pg-to263-3 pg-to252-3 33cn10n 34cn	PDF
DIODE D27 Abstract: 2SC3115-TBD27 35CN10N Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	ipb35cn10n ipi35cn10n ipp35cn10n ipd33cn10n +4ipu33cn10n diode d27 2sc3115-tbd27 35cn10n	PDF
33CN10N Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	ipb34cn10n ipi35cn10n ipd33cn10n ipp35cn10n +4iec61249-2-21 pg-to263-3 33cn10n ipb34cn10n g	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)	Original	ipb34cn10n ipi35cn10n ipd33cn10n ipp35cn10n +2iec61249-2-21 pg-to263-3	PDF
33CN10N Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	ipb34cn10n ipi35cn10n ipd33cn10n ipp35cn10n +9pg-to263-3 pg-to252-3 33cn10n to262 pcb footprint ipd33cn 34cn 33cn10 34cn10n 35cn10	PDF
33cn10n Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27 Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	ipb35cn10n ipi35cn10n ipd33cn10n ipp35cn10n +8ipu33cn10n 33cn10n diode d27 d27d27 35cn10n d804 marking 27.a 2sc3115-tbd27	PDF
33CN10N Abstract: D27D27 33cn10 IPD33CN10N Contextual Info: 35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)	Original	ipb34cn10n ipi35cn10n ipp35cn10n ipd33cn10n +4ipu33cn10n 33cn10n d27d27 33cn10	PDF