TEMPERATURE121 Search Results

Contextual Info: L FASCO INDS/ SENISVS 40E D Si 34cn 7 3 a □□012b2 T S S E N X 1 Features Absolute Maximum Ratings*1' T a = 25°C unless otherwise stated. • • • • Storage +85*C

Contextual Info: For Im eiiaft M i m e , Coniaci Your Local Salesperson REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • • • • • • PRECISION CALIBRATED VOLTAGE STANDARD +10.00V OUTPUT HIGH ACCURACY: ±0.005V VERY LOW DRIFT: 1ppm/°C max EXCELLENT STABILITY: 50ppm/1000hrs

Contextual Info: CY7C106 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 4 Static R /W RAM Features Functional Description • High speed - U à = 25 ns T he CY7C106 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable

Ablebond 36-2

Contextual Info: What HEWLETT* mLliM PACKARD 2 0 - 4 0 GHz Amplifier Technical Data HMMC-5040 Features • Large Bandwidth: 2 0 - 4 4 GHz Typical 2 1 - 4 0 GHz Specified • High Gain: 22 dB Typical • Saturated Output Power: 21 dBm Typical • Supply Bias: < 4.5volts@ < 300 mA

C495

Abstract: ClD71A CLD71 CLD72 CLD71-A
Contextual Info: 34^730 MOE D FASCO INDS/ SENISYS GDDiata 1 ».'SENI B C H z a ia i CLD71/CLD72 Silicon Planar Photodiodes CLD71 - TOP V IE V CLD72 - TOP V IE V THE ANODE OF 'V ' VERSIONS IS IDENTIFIED BY A COLOR DOT ALL DIMENSIONS ARE IN INCHES MILLIMETERS] „ r *' V.W., C2.031

transistor c1781

Abstract: el wire inverter digital piano IC C1781 Y51 h 85c S-960 S-970 piano digital
Contextual Info: 40E D El 34=1=1730 D D D 1 2 1 4 = Ö S E N I GEEEEai S-960/970/980/990 Series Slotted O p tica l S w itch e s with D iaitai O utput _ _ FASCO INDS/ S E N I S Y S 0.980 24.89) 0.960 C24.38J DIMENSIONS A R E IN INCHES [M ILLIM ET ER S] £p _ 0.260 16.60]

BUS-8553-883B

Contextual Info: 00Q BUS-8553 IL.C DATA DEVICE CORPORATIONS_ _ MIL-STD-1553 TRANSCEIVER FEATURES • M EETS ALL MIL-STD-1553A AND 1553B REQUIREMENTS DESCRIPTION The BUS-8553 Transceiver is a com­ plete transmitter and receiver conform­ ing fully to MIL-STD-1553A and 1553B,

Contextual Info: ¡¡M il M 65856 DATA SHEET_ 32,768 x 8 STATIC RAM DESCRIPTION . . BICMOS FOR OPTIMUM SPEDD/POWER HIGHSPEED COMMERCIAL : 10712/15 ns max MILITARY : 12715 ns (max) LOW ACTIVE POWER 1017 mW . . . . LOW STANDBY POWER 165 mW TTL-COMPATIBLE INPUTS AND OUTPUTS

REF102U

Contextual Info: B U R R -B R O W N [ INA128 INA129 1 Precision, Low Power INSTRUMENTATION AMPLIFIERS FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50^V max T he IN A 1 2 8 and IN A 1 2 9 are low pow er, general purpose instrum entation am plifiers offering excellent accuracy. T h eir versatile 3 -o p am p desig n and sm all

TOPSWITCH buck

Abstract: Three-terminal Off-line PWM Switch TOPswitch buck boost PWR-TOP100-4 C00C PWRTOP103YAI PWR-TOP100YAI LSS350 PWR-TOP103 TOPSwitch II
Contextual Info: PWR-TOP100-4 TOPSwitch Family POWER Three-terminal Off-line PWM Switch INTEGRATIONS, INC. Product Highlights Low Cost Replacement for Discrete Switchers • 20 to 50 fewer components - cuts cost, increases reliability • Source-connected tab and Controlled MOSFET turn-on

Contextual Info: HEW LETT PACKARD 38 GHz LNA Technical Data HMMC-5038 Features • Low N oise Figure: 4.8 dB • Frequency Range: 37 - 40 GHz • High Gain Adjustable : 3 V, 120 mA @ 23 dB Gain 3 V, 80 mA @ 20 dB Gain • 50 i l Input/Output Matching Description The HMMC-5038 MMIC is a highgain low-noise amplifier (LNA)

Contextual Info: PRELIMINARY CY7C1512 64K x 8 Static RAM Features and three-state drivers. This device has an automatic pow­ er-down feature that reduces power consumption by more than 75% when deselected. • High speed — tAA = 15ns Writing to the device is accomplished by taking chip enable

1100C

Abstract: CLED166A CLED166B CLED166C CLED166D CLT506
Contextual Info: FASCO INDS/ SENISYS 4DE D 34=1=3730 0DG1314 E M SENI icHzzaaafl CLED166 Series T4UI Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • § • Storage to + 100“C

Contextual Info: CY62128 PRELIM INARY 128K x 8 Static RAM Features feature that reduces power consumption by more than 75% when deselected. • tAA = 70 ns • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable one JEt and write enable (WE) inputs LOW and chip enable

Contextual Info: FASCO INDS/ SENISYS 4DE D 34=1=1734 0DD1314 S r a S E N I ic E E a a a a e l-ptKi CLED166 Series G a lliu m A rs e n id e In fra re d Em itting D io d es ^ 0.138 C3.513 n iA 0.130 C3.303 U iA _ r O 1— 0.018 C0.46 0.014 C0.36) DIMENSIONS A R E IN INCHES EN ILLIM ET ER S)

C2579

Abstract: c-2502
Contextual Info: 40E D 3 4 CH 7 3 A ISENI Q0D1214 R S-960/970/980/990 Series Slotted Optical Switches with Diaitai Output _ FASCO INDS/ SENISYS _ Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storing and Operating +85SC

Contextual Info: What H EW LETT* mLliM PACKARD 2 0 - 4 0 GHz Amplifier Technical Data HMMC-5040 Features • Large Bandwidth: 2 0 - 4 4 GHz Typical 2 1 - 4 0 GHz Specified • High Gain: 22 dB Typical • Saturated Output Pow er: 21 dBm Typical • Supply Bias: < 4 .5 v o lts@ < 300 mA

Contextual Info: FASCO INDS/ SENISYS ^OE D E3 34cl cJ73a 0 0 0 1 3 2 b '1.'.•■SEN-1 -640_ Digital Output Hall-Effect Assembly BOTTOM V I E V Features A b so lu te M a x im u m R a t in g s Ta = 25°C un le ss otherwise stated. • a • • • Storage Tem perature. -55“G t o + 1 5 0 ° 6

CLE330

Abstract: CLE330E
Contextual Info: CLE330E Ciairex € Super-efficient Aluminum Gallium Arsenide IRED Technologies, Inc. M arch, 2001 0.130 3.30 max- 0.213(5.41) 0.207 (5.26) 1.00 (25.4) min. 0.050 (1.27) max 0.100(2.54) CATHODE 0.169(4.29) 0.163(4.14) ?. 1_ ANODE - -•>( (*0.010 (0,25) nom

Contextual Info: fax id: 1077 PRELIMINARY CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i through l/0 8), is written into the location specified on the address pins (A0

150a gto

Abstract: CLD41 CLD41B CLD42 CLD42A CLD42B CLD41A K8060
Contextual Info: FASCO INDS/ SENISYS 4QE 34Ti73fl D 00012SÔ 7 EaSÈNI I B E EEia • ' T - t - t l ' JD I CLD41/CLD42 Series Silicon Planar Photodiodes 1r— 0.025 r*“ F e atu res C0.64J A b s o lu te M a x im u m R atin g s *1* T a = 25°C unless otherwise stated. Storage Temperature. -40°Ct0 +150,C

CY7C1512

Abstract: 17mc
Contextual Info: PRELIM INARY CY7C1512 64K Features X 8 Static RAM and three-state drivers. This device has an automatic pow­ er-down feature that reduces power consumption by more than 75% when deselected. • High speed — tAA = 15n s • CMOS for optimum speed/power • Low active power

Contextual Info: CY7B155 CY7B156 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 16K x 16 Synchronous Static RAM Features Functional Description • 16K x 16 common I/O T h e CY7B155 a n d CY7B156 are 16K by 16 synchronous static R A M s targeted for high-perform ance burst-oriented applica­

Contextual Info: CY7B191 CY7B192 AD VAN CED INFORM ATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R /W RAM with Separate I/O Features Functional Description • High speed T h e CY7B191 and CY7B192 are high-per­ form ance BiCM O S static R A M s organized as 65,536 words by 4 bits with separate I/O .