0D255 Search Results

Contextual Info: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

Contextual Info: Or, Call Customer S em e at 1-8B0-548-6132 USA Only Precision VOLTAGE REFERENCE FEATURES DESCRIPTION • +10.00V OUTPUT The REF10 is a precision voltage reference which provides a +10.00V output. The drift is laser-trimmed to lppm /°C max (KM grade) over the full specifica­

Contextual Info: For Im eiiaft M i m e , Coniaci Your Local Salesperson REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • • • • • • PRECISION CALIBRATED VOLTAGE STANDARD +10.00V OUTPUT HIGH ACCURACY: ±0.005V VERY LOW DRIFT: 1ppm/°C max EXCELLENT STABILITY: 50ppm/1000hrs

sayb

Abstract: 113C R51n 5005b
Contextual Info: 113C Power Module: DC-DC Converter; +5 Vdc Input, -1 5 Vdc Output, 0.75 W Features • High reliability: MTBF > 4,310,000 hours at 40 “C ■ Low profile ■ Small size: 0.96" x 0.70“ x 0.47“ 24.4 mm x 17.8 mm x 11.9 mm ■ Printed circuit board mountable

Contextual Info: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.

260TC

Abstract: KSE3055T
Contextual Info: NPN SILICON TRANSISTOR KSE3055T GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 High Current Gain-Bandwidth Product fr = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emltter Voltage

LM1040

Abstract: LM-1040
Contextual Info: I I I I I C R T F I L Y 5 T •Iff IS E M I C O N D U C T O R CAT504 8-Bit Quad DACpot FEATURES APPLICATIONS ■ Output settings retained without power ■ Automated product calibration. ■ Output range includes both supply rails ■ Remote control adjustment of equipment

Contextual Info: HN28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Fiash Memory organized as 131,072 x 8-bit. The HN28F101 is cap ab le o f in -syste m e le ctrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BU RR-BRO W N H REF102 H AVAILABLE IN DIE Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • +10V ± 0.0025V OUTPUT • VERY LOW DRIFT: 2.5ppm/°C max • EXCELLENT STABILITY: 5ppm/1000hr typ • EXCELLENT LINE REGULATION:

5962H9657202VXA

Abstract: 5962H9657202VXC UT54ACS245UVAH qml-38535 54ACS245S UT54ACS245SUVAH 54ACS245 UT54ACS245UVCH 5962H9657201QXC
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add device type 02. Add U u and U . tests. Add Schmitt trigger threshold tests for device type 02. ClTange table IB. Editorial changes throughout. 96-11-19 Monica L. Poelking REV SHEET REV SHEET 15 16 REV S TA TU S

Contextual Info: MITSUBISHI MICROCOMPUTERS M37212M4-XXXSP, M37212M6-XXXSP/FP M37212EF-XXXSP/FP, M37212EFSP/FP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION The M37212M4-XXXSP, M37212M6-XXXSP/FP are single-chip mi­

Contextual Info: MITSUBISHI LSIS M 5 M 4 1 8 1 6 0 B J ,T P ,R T -6 ,-7 ,-8 ,-6 S ,-7 S ,-8 S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for

Contextual Info: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer

Contextual Info: G E SOLID STATE 17E D • 3S7SQS1 0055522 6 T W P i 'O C s * SECTION 1 INTRODUCTION 1.1 GENERAL The C D P 68H C 05C 4 H C M O S M icrocom puter is a m em ber of the C D P 68H C 05 Fam ily of low-cost single-chip microcomputers. This 8-bit m icrocom puter contains an on-chip

M37221

Contextual Info: MITSUBISHI MICROCOMPUTERS M37221 EF-XXXSP,M37221 EFSP SIN G LE-C H IP 8-BIT CM OS M ICRO CO M PUTER for VOLTAGE S Y N T H E S IZ E R with O N -SC REEN D ISPLA Y C O N T R O LLER DESCRIPTION The M 37221EF-XXXSP and M37221 E F S P are single-chip microcom­

HN58C1001

Abstract: DP-32 HN58V1001 HN58V1001FP-25 HN58V1001P-25 HN58V1001R-25 HN58V1001T-25 Hitachi Scans-001
Contextual Info: HN58V1001 Series Prelim inary 1M 128Kx 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability.

infrared burglar alarm

Abstract: BFR200 FET 1127 L7E transistor fet junction transistor
Contextual Info: bt.SB'IBl 0055B07 b*ì4 H A P X Philips Semiconductors D ata sheet statu s Preliminary specification d a te o f issue April 1991 BFR200 N-channel junction field-effect transistor N AUER P H I L I P S / D I S C R E T E FEATURES • Ultra-low leakage performance

tc5565pl

Abstract: CDB4 BPF01
Contextual Info: TC8861F/65F-01 -1 • clOci724lì 0025U7U 40=] *T0S3 TOSHIBA CUC/UP 1. L4E D GENERAL T he speaker dependent isolated word recognition device set consists of TC8861F, TC8865F-01 and 64kbit static RAM. T he device set contains the whole circuits and functions necessary to recognize