BFR200 Search Results

Contextual Info: bbSBiBl 0025207 bT4 H A P X Philips Semiconductors D ata sheet status P re lim in a ry s p e c ific a tio n d a te o f issue A p ril 1991 BFR200 N-channel junction field-effect transistor N AUER PHILIPS/DISCRETE FEATURES • Ultra-low leakage performance H gss max. 3 pA ; important for

infrared burglar alarm

Abstract: BFR200 FET 1127 L7E transistor fet junction transistor
Contextual Info: bt.SB'IBl 0055B07 b*ì4 H A P X Philips Semiconductors D ata sheet statu s Preliminary specification d a te o f issue April 1991 BFR200 N-channel junction field-effect transistor N AUER P H I L I P S / D I S C R E T E FEATURES • Ultra-low leakage performance

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

PXTA14

Abstract: BST60 PMBTA14 2PD601A PMBTA64
Contextual Info: SELECTION GUIDE page G eneral p urpose tra n sisto rs 24 H ig h -fre q u e n cy tra n sisto rs 28 B ro a d b a n d tra n sisto rs 29 S w itch in g tra n sisto rs 31 L o w -n o ise tra n sisto rs 33 H ig h -vo lta g e tra n sisto rs 34 F ie ld -e ffe ct tra n sisto rs

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

infrared burglar alarm

Abstract: BFR200 fet junction n-channel transistor RC low pass filter FET 1127 Infrared-Sensor transistor marking CS marking E10 DIODE
Contextual Info: 7 1 1 D & 2 L □ D b '1173 MMfi H I P H I N Philips Semiconductors Data sheet status P re lim in a r y s p e c ific a t io n date of issue A p ril 1991 FEATURES • U ltra-low leakage perform ance H gss max. 3 pA ; im portant for use in highly sensitive equipm ent,

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors