CY7C1021V Search Results

CD Z44

Abstract: 3312B
Contextual Info: CY7C1021V CYPRESS 64K x 16 Static RAM Features W riting to th e device is a c c o m plished by ta kin g chip ena b le CE and w rite enable (W E) inputs LOW. If byte low enable (BLE) is LOW, then da ta from I/O pins (l/0-| throu gh l/O g ), is w ritten into the location sp e c ified on the address pins (A0

CY7C1021V30

Contextual Info: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.08 mW (max.)

CY7C1021V

Contextual Info: CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected

Contextual Info: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq

CY7C1021V33

Abstract: A194 JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97099 VERSION 1.0 September, 1997 64K x 16 Asynchronous Static RAM, 3.3V Operation CY7C1021V33 Cypress Semiconductor 64K x 16 Static RAM, 3.3V Operation Device:CY7C1021V33 Package: 44-pin, 400-mil SOJ QTP# 97099, V. 1.0

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

WINBOND cross reference

Abstract: winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199
Contextual Info: High-Speed SRAM Cross Reference Guide Density bits 64K Org. (bits) 8K*8 Package Type Company Winbond W2465A UTRON UT6164 ISSI IS61C64AH Cypress 256K 32K*8 CY7C185 Voltage 300-mil DIP X 5V X Speed (ns) SOJ SOP TSOP-I STSOP X 12 X X 10/12/15 X X 15/20/25 X

CY7C1021V33

Abstract: 1021V-10 3310Z
Contextual Info: fax id: 1077 C Y7C 1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O i through l/0 8), is written into the location specified on the address pins (A0

m63044

Abstract: m64076 M64026 m7108 M64073 M63062 M64021 M71081 M63006 M71064
Contextual Info: RELIABILITY MONITOR SUMMARY QUARTERLY SUMMARY, QUARTER 1, 1997 April 17, 1997 PERFORMED PER THE REQUIREMENTS OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION. CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY STANDARD STRESS TEST DESCRIPTIONS Test HTOL HTOL2

tms 9937

Abstract: M9922 TSMC fuse PALC22V10B-15PC 135C-6 cy7c136 PALC22V10B Hyundai 9944 140C CY7B923-JI
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 4, 1999 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 4, 1999

Contextual Info: fax id: 1083 W CYPRESS ADVANCED INFORMATION C Y 7 C 10 2 1 V 30 64K x 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

MR841

Abstract: M84032 M84020 CY7C341 MR840
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 1, 1999 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 1, 1999

reliability report

Abstract: MR840
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 3, 1999 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 3, 1999

MP-8000

Abstract: Nitto MP 8000 cel-9200u mp8000 140C JESD22 8361A
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97255 VERSION 1.0 October, 1997 Backgrind Wafer Elimination up to 29 mils for 32 lds, 300 mils SOJ package Cypress Semiconductor Backgrind Wafer Elimination Package: SOJ/ Assembly: Cypress Bangkok/ASE Taiwan

tc 97101

Abstract: 140C A194 CY7C1021 JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97101 VERSION 1.0 September, 1997 64K x 16 Static RAM CY7C1021 Cypress Semiconductor 64K x 16 Static RAM Device:CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97101, V. 1.0 Page 2 of 6 September, 1997 PRODUCT DESCRIPTION for qualification