00G33 Search Results

diode BY127 specifications

Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
Contextual Info: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/

inmos T414

Abstract: IMS T414 Transputer T414 IMST414 T414 inmos transputer reference manual transputer 7FFFFF84 22FC
Contextual Info: INMOS CORP 10E D | 4aG2b0fl 00G33S0 3 1 Ö nm oS C h a p te r 4 T - ^ ? -/7 -5 7 9 IMS T414 engineering data 107 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IN M O S CORP "T-Vf-/7 * £ 7 40 02 1, 68 0 0 0 3 3 5 1 I I s I

diode BY127

Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
Contextual Info: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/

SOT23 package configuration AWT

Abstract: 712 sot23 regulator 712 OF IC 713 m 713 TK71215 GGG33 712 regulator TOKO voltage regulators
Contextual Info: r&£TOKO TK711/712/713 LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Dropout Voltage ■ Low Quiescent Current ■ Switch Mode Power Supplies ■ Very Stable Output ■ DC-DC Converters ■ Extremely Small Package SOT23 ■ Stepper Motor Drivers ■ Built-in Output On/Off Control On 713xx

Contextual Info: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for

diode a7

Abstract: A7 DIODE ME3012A7 TJ3 diode bridge me3006a7 ME3012 powerex ME30
Contextual Info: POWEREX INC 15E D • TETHbBl 00033^1 G ■ fCMEREX M E30 Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003LeMans, France (43) 72.75.15 7 A7 Three-Phase Diode Bridge Module 75 Amperes/600-1600 Volts

Contextual Info: S H I S 7 , x '/ W Surface Mounting Device V 3 7 h U T • Schottky Barrier Diode M > S Twin Diode 1^- vt-aia DF10SC4M OUTLINE DIMENSIONS C ase ; S T O -2 20 40 V 10A •S M D m • T j 1 50°C • P 7 r r s m J V ' > x f i i •D C /D C H > A -9 • * n , y - A . O Affiü

EP610 "pin compatible"

Abstract: altera ep610
Contextual Info: bflE D ALTERA CORP • GS^S37B G0033S4 b7fl » A L T EP610A E P LD □ Features □ □ □ Preliminary Information □ □ □ Highest-performance, 16-macrocell Classic EPLD Combinatorial speeds with t PD = 7.5 ns Counter frequencies up to 125 MHz Pipelined data rates up to 142.9 MHz

Hughes Microelectronics

Abstract: MIL-STD 19500 Motorola 125H MIL-C-83526 aircraft transmitter mtbf
Contextual Info: lightwave data link • H erm etic, 0.12-inch high, gull-w ing package • Data rates: 10 M bits/s to 125 M bits/s • W ide operating tem perature range: -5 5 ° C to +125°C • 1.3 |jm LED and PIN photodiode • Link distance: up to 3 km • T ypical link budget: 23.0 dB at 25°C

Contextual Info: MICRON TECHNOLOGY INC V SSE D ic in a r s i SRAM blllSMT DGG33bM ITS B U R N MT5C1604 4K X 4 S R A M 4K X 4 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE option

NOVRAM

Contextual Info: ^417143 SEE D XICOR INC Advance Information TÖ3 X i Q K X20C05 512x8 High Speed AUTOSTORE NOVRAM T -4 b r2 3 -3 ~ l 4K FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum

Contextual Info: ooozavme A3d sogt diAiv 3 L A3d JO L I33HS L :8 ONIMVdQ d3IA|0_LSn3 31V3S Of I L S b 01 CG13ldlS3d LV 6LL00 ON ONIMVda 03dS NOIlVOUddV Z Z f L—80 L 03ds lonao^d 3kNVN UOI^DJOdjOQ S O IU O jp 9 | 3 ddannN IdVd 1 0t17 1 1 u 1 t 0 /_t 1 Z/_ 0 Z7 U 1v V _ SOIUQJJOe/3

Contextual Info: Ultra Fast Recovery Rectifiers UF160, UF17Q, UF180 r~A M illim e te r Dim . In c h e s M inim um A 8 C .081 1.10 .160 .028 M axim um M inim um .107 - .205 .034 2.057 27.94 4.064 .711 M axim um N o te s 2.718 Dia. 5.207 .864 Dia. - PLASTIC D041 Microsemi

GM71C464A

Contextual Info: G M 53C 261 GoldStar GOLDSTAR ELECTRON CO, LTD. 65,536 WORDS x 4 BIT CMOS MULTIPORT VIDEO RAM D escription Features The GM53C261 is a high speed 65,536 x 4 bit mul­ tiport CMOS dynamic memory. The two ports, random access and serial access, are configured

Contextual Info: r& T O K O TK11701 PROGRAMMABLE VOLTAGE REGULATOR FEATURES APPLICATIONS • Low Dropout Voltage ■ Battery Operated Equipment ■ Wide Operation Voltage Range ■ Cordless Telephone ■ 1.5 V to 9.25 V of Variable Output Voltage is ■ Test Equipment Available Step 0.25 V

Contextual Info: i t f - K Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS D1NL40 Case : 0.6 / ¿2.6* 400V 0.9A =E= O ' •trr5 0 n s e -w T ! Cathode : Anode ^ Cathode band s K ^ E n a s fflia M arking •S R B S •7 'J -T ft-iJ L / L4 • S S . OA, S§B£

Contextual Info: SEDI 278 CMOS DOT MATRIX LCD CONTROLLER DRIVER • DESCRIPTION The SED1278 is a character LCD controller-driver, capable of driving displays as large as 2 lines of 8 characters 5 x 8 pixels , with minimum external components. The SED1278 has an internal CGROM consisting of 240 characters ( 5 x 7 ) plus the underline cursor, JIS,

X2444

Abstract: B04HX
Contextual Info: SEE » XICOR INC ^ 4 1 7 4 3 0003323 7?fl JÙEflT Preliminary Information X24C44 256 Bit Serial Nonvolatile Static RAM 1 6 x 1 6 Bit T -4 b -2 2 r3 7 FEATURES DESCRIPTION • • • • The Xicor X24C44 is a serial 256 bit NOVRAM featuring a static RAM configured 16x16, overlaid bit by bit with

Contextual Info: M O SEL V tT E U C V400J8/9 4M X 8, 4M X 9 B IT F A S T PAGE MODE CMOS DYNAMIC RAM MEMORY MODULE HIGH PERFORMANCE, LO W POWER 70/70L 80/BOL 10/10L M ax. RA S A cce ss T im e, tRAC 70 ns 80 ns 100 ns M ax. C o lum n A d dre ss A cce ss T im e, (tCAA) 35 ns

71c1000

Abstract: GA032 trw 1014 RAS 0510 GM71C1000 GM71C1000-80 GM71C1000-12
Contextual Info: GM71C1000 WORDS X 1 BIT CMOS DYNAMIC RAM Description Pin Configuration The G M 71C1000 is the new generation dynamic RAM QDD3202 1048576 1 M G ST PRELIMINARY SPECIFICATION REV. 0 ^ 18 PLASTIC DIP TOP VIEW organized 1048576 x 1 Bit, GM 71C1000 has realized

hitachi invc 191

Abstract: triggering scr with microprocessor PM7322 RCMP-800 dd034 GR-1110-CORE JVC dc7
Contextual Info: A I # I ISSUE 5 PM C -Sierra, Inc. PM7322 RCMP-800 ROUTING CONTROL, MONITORING AND POUCING 800 Mbps FEATURES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements

LG color tv Circuit Diagram schematics

Abstract: tv schematic diagram PHILIPS ECG130 ECG730
Contextual Info: PH ILIPS b b S BTSÔ 17E D E C G INC 0 0 0 3 3 4 e] û ECG730 T -7 7 -0 7 -1 3 TV VIDEO IF SYSTEM semiconductors E C 0730 is a monolithic integrated circuit that in­ corporates an entire video T V -iF subsystem on a single chip. Innovations in Integrated circuit design, in addition to the

74S474

Abstract: 16kx4 Y242 s476
Contextual Info: 14E D INTEGRATE» DEVICE • 4Ö25771 0003334 b U * 1dt Integrated Devlcelèchnolosy Inc CMOS STATIC RAM 6 4K 16 K x 4-BIT) FEATURES: • Optim ized for fast RISC processors Including the IDT79R3000 • Output Enable (OE) pin available for added system flexibility

LAS1100

Abstract: LAS1100S LAS1000 100C las-1100_linear
Contextual Info: SENTECH SÔE CORP LA S-1000 LAS-1100 D 613^13^ 0003300 777 * S ET 150mA POS. VOLTAGE REGULATORS LINEAR CONTROLLERS ABSOLUTE MAXIMUM RATINGS Power Dissipation S Ta s 25°C DESCRIPTION The LAS 1000, 1100 voltage regulators are monolithic integrated circuits designed