330000P Search Results

Contextual Info: Model LPE-6562 Vishay Dale VISHAY Transformers/lnductors Surface Mount, Gapped and Ungapped Custom Configurations Available ELECTRICAL SPECIFICATIONS Multiple winds are connected in parallel Inductance Range: 10|j.H to 330000p.H, measured at 0.10V RMS @ 10kHz

Contextual Info: LPE-6562 VISHAY Vishay Dale Surface Mount Transformers/lnductors Gapped and Ungapped Custom Configurations Available E L E C T R IC A L S P E C IF IC A T IO N S Multiple winds are connected in parallel Inductance Range: 10pH to 330000pH, measured at 0.10V RMS @ 10kHz

Contextual Info: A COMPANY OF MODEL LPE-6562 Inductors Surface Mount, Gapped and Ungapped FEATURES • Totally integrated manufacturing • Pick and place compatible • Statistical process controlled • Tape packaging per EIA-481 • Low cost • Qualification data available

Contextual Info: EIN UNTERNEHMEN VON Allgemeine Angaben General Features Roederstein Einfuhrung / Introduction Scheibenkondensatoren / Disc capacitors Seite / Paqe 4 4 1. Nennwerte-Reihe / Nominal rate series 2. MeB- und Prufbedingungen Measuring and testing conditions 3. Kennzeichnung / Marking

CGH55030

Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
Contextual Info: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal

CGH5503

Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1

32QAM circuit

Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1

Contextual Info: PRELIMINARY CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal

CGH55030F2

Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/

12.0.12 300mA transformer

Abstract: transformer 220 to 12-0-12 SMPT0706 12-0-12 1A transformer EPC17 BOBBIN power transformer 12012 slf7745 NLL4532 zo 107 tdk mlf3216
Contextual Info: SM Components at a Glance Product name Multilayer Ceramic Chip Capacitor Type or Series Part No. Dimensions (mm) [inches] Shape W T 1 [.039] 0.5 [.020] 0.5 [.020] Class I 0.5 to 330pF Class II 220 to 33000pF 1.6 [.063] 0.8 [.031] 0.8 [.031] Class I 0.5 to 1000pF

capacitor Y5S 022

Abstract: BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor
Contextual Info: VISHAY INTE R TE C HNO L O G Y , IN C . INTERACTIVE data book CERAMIC DISC CAPACITORS vishay BCcomponents vsD-db0071-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

680000pf

Abstract: C2012JB CC0603 X7R C5750
Contextual Info: 42144_C2012 1/4 Ceramic Capacitors C Series For Mid Voltage SMD FEATURES • The unique design structure for mid voltage enables a compact size with high voltage resistance. • Rated voltage Edc: 100, 250 and 630V. • C3225, C4532 and C5750 types are specific to reflow soldering.

Ceramic Singlelayer Capacitors

Abstract: IEC 384-14/2 X1 440 Y1 250 wkp 4n7 wko 400v 4n7 disc ceramic capacitor WKO 4n7 M X1 WYO 5n M 250 103 Ceramic Disc Capacitors 101 Ceramic Disc Capacitors 2n2, Y2 ±20%, 250V Y2 CLASS CAPACITOR wkp 2n2 m
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC SINGLELAYER CAPACITORS vishay DRALORIC vsD-db0012-0011 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

CGH55030F2

Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/

Contextual Info: M ODEL LPE-6562 Inductors Surface Mount, Gapped and Ungapped FEATURES • • • • • • • • • Totally integrated manufacturing Pick and place compatible Statistical process controlled Tape packaging per EIA-481 Low cost Qualification data available

RO4350B

Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

Vitramon

Abstract: vitramon VJ 45015 vj91 vitramon Marking
Contextual Info: VJ Tip ‘N RingTM Vishay Vitramon Multilayer Ceramic Chip Capacitors FEATURES • • • • • • • Ideal for telephone line Tip ‘N Ring filtering. Replaces high voltage, leaded, film capacitors. Rated for telecommunications voltages. Saves board space and weight.

2012X7R

Abstract: C5750
Contextual Info: 42144_C2012 1/4 C Series Ceramic Capacitors For Mid Voltage SMD SHAPES AND DIMENSIONS APPLICATIONS Snapper circuits for switching power supply, ringer circuits for telephone and modem, or other general high voltage circuits. L W • The unique design structure for mid voltage enables a compact

hemt .s2p

Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/

Contextual Info: M O DEL L P E -6562 In d u c to rs S u rfa c e M o u n t, G a p p e d an d U n g a p p e d FEATURES • • • • • • • • • • • • • • • • • Totally integrated manufacturing Pick and place compatible Statistical process controlled

CGH55030P2

Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/

ATC600L

Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/

RO4350B

Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1