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    32N90B2D1 Search Results

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    32N90B2D1 Price and Stock

    IXYS Corporation

    IXYS Corporation IXGR32N90B2D1

    Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXGR32N90B2D1 1
    • 1 $12.68
    • 10 $10.10
    • 100 $9.08
    • 1000 $9.08
    • 10000 $9.08
    Get Quote

    IXYS Corporation IXGT32N90B2D1

    IGBTs 32 Amps 900V 2.7 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGT32N90B2D1
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    32N90B2D1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32N90B2

    Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES


    Original
    32n90b2d1ic110o-24732n90b2 PDF

    Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original
    32n90b2d1150ocic110125oc+310parameters30-12ar0-12a PDF

    SiS 961

    Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9
    Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original
    32n90b2d1150ocic110125oc+1030-12ar0-12asis 96132n90b720visoplus247if11032n90ixgr32n90b2d132n9 PDF

    IXGH 32N90B2D1

    Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2
    Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES


    Original
    32n90b2d1o-247ic110ixgh 32n90b2d1+4ixgh32n90b2d1if110720v32n90b2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF