32BANK Search Results
32BANK Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
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BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm | |
HYR1612820G-653
Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
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16xx20G/HYR 18xx20G HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86 | |
EL B17Contextual Info: UGD128R16 8 08U6J(7J) Data sheets can be downloaded at www.unigen.com 256/288MB Bytes (128M x 16/18 bits) RAMBUS SO-RIMM MODULE 160 Pin SO-RIMM based on 8 pcs 8M x 16/18 RDRAM & 16K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION |
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UGD128R16 08U6J 256/288MB 18bits 800MHz 600MHz 160-Pin UGD128R1608U6J-L6/G6/T6 256MB 128Mx16) EL B17 | |
SCK 183
Abstract: 128Mx16
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UG7128R16 16U6J 18bits 800MHz 600MHz 184-Pin 256MB SCK 183 128Mx16 | |
a65 1021Contextual Info: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) |
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MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb a65 1021 | |
DRAM material declarationContextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 |
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MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb DRAM material declaration | |
MARKING CODE 11gbContextual Info: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
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MR18R326GAG0 256/288Mbit 32Mx18) 16pcs 576Mb 32K/32ms MARKING CODE 11gb | |
RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
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BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B | |
Contextual Info: RDRAM Code Information 1/2 Last Updated : June 2009 K4RXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification R : RDRAM ® 4~5. Density,Refresh 27 : 128M, 16K/32ms (1.95us) 44 : 144M, 16K/32ms (1.95us) 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
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16K/32ms 54ball) 32K/32ms 300MHz 28clks, | |
ic A2611
Abstract: a2611 A2631 a2610 a2633 s2s65a00 A2624 18vdc power supply Epson EPD controller A2651
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S2S65A00 ic A2611 a2611 A2631 a2610 a2633 A2624 18vdc power supply Epson EPD controller A2651 | |
marking A26
Abstract: HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD
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16xx20G/HYR 18xx20G 256MB, 128MB, marking A26 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD | |
SAMSUNG MR18R162GMN0
Abstract: A76 MARKING CODE MR18R162GMN0-CK8
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MR16R1624 MR18R1624 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 A76 MARKING CODE MR18R162GMN0-CK8 | |
Contextual Info: Direct Rambus RIMM™ Module 256 MBytes 128M x 16/18 based on 8Mx16/18 Overview Key Timing Parameters/Part Numbers The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, |
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8Mx16/18 256MB HYMR11696/11896 | |
cmos bookContextual Info: 2 5 6 M /2 8 8 M -b it b a s e d R IM M HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY O v e rv ie w K e y T im in g P a ra m e te rs /P a rt N u m b e rs T h e R a m b u s R I M M m o d u le is a g e n e ra l p u r p o s e T h e f o llo w in g t a b le lis ts th e f r e q u e n c y a n d la te n c y b in s |
OCR Scan |
HYMR2xxx16 256/288Mb 13tCYCLE 357MHz 110mA 180mA 130mA 750mA 120mA 190mA cmos book | |
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SAMSUNG MR18R162GMN0
Abstract: MR18R162GMN0-CK8
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MR16R162C MR18R162C 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 MR18R162GMN0-CK8 | |
Contextual Info: KMMR16R84 6/8/C/G C1 KMMR18R84(6/8/C/G)C1 4/6/8/12/16d 4/6/8/12/16d RIMMTM RIMMTM Preliminary Module with 128Mb RDRAMs Module with 144Mb RDRAMs Overview Key Timing Parameters/Part Numbers The Rambus RIMM module is a general purpose highperformance memory subsystem suitable for use in a broad |
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KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 128Mb/144Mb | |
S8S3122X16
Abstract: S8S3122X16-TCR1 S8S3122X16-TCR2
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S8S3122X16 16bit AG1000re 50-TSOP2-400CF 20MAX 10MAX 075MAX S8S3122X16 S8S3122X16-TCR1 S8S3122X16-TCR2 | |
EM488M1644VBAContextual Info: 128Mb Mobile SDRAM Ordering Information EM 48 8M 16 4 4 V B A – 75 F EOREX Logo EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : Power Blank : Standard I : Industrial 40 41 42 43 46 48 F: PB free package Density 16M : 16 Mega Bits 8M : 8 Mega Bits |
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128Mb 200MHz 183MHz 167MHz 143MHz 133MHz 125MHz 100MHz 16Bank 32Bank EM488M1644VBA | |
MB89980
Abstract: FPT-64P-M09 MB89983 MB89P985 ROM-64QF2-28DP MB89P985101 al p53
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MB89980 MB89983/P985/PV980 256-byte FPT-64P-M09 MB89983 MB89P985 ROM-64QF2-28DP MB89P985101 al p53 | |
A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
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256/288Mb 256/288Mb 600MHz 711MHz 800MHz A23 851 diode diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745 | |
b58 468
Abstract: B58 608
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MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb b58 468 B58 608 | |
HYR163240G-653
Abstract: HYR163240G-745 HYR163240G-840 HYR163240G-845 HYR166440G-653 HYR166440G-745 HYR183240G-653 HYR183240G-745 HYR183240G-840 HYR183240G-845
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HYR16xx40G HYR18xx40G 512MB, 256MB, 128MB, HYR163240G-653 HYR163240G-745 HYR163240G-840 HYR163240G-845 HYR166440G-653 HYR166440G-745 HYR183240G-653 HYR183240G-745 HYR183240G-840 HYR183240G-845 | |
HYMR116128-653
Abstract: HYMR116128-745 HYMR116128-840 HYMR116128-845 HYMR118128-653 HYMR118128-745 HYMR118128-750 HYMR116128-750
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8Mx16/18 256MB HYMR116128/118128 HYMR116128-653 HYMR116128-745 HYMR116128-840 HYMR116128-845 HYMR118128-653 HYMR118128-745 HYMR118128-750 HYMR116128-750 | |
MR16R162GAF0-CK8
Abstract: MR16R1622
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MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb MR16R162GAF0-CK8 |