313233 Search Results

N25Q256

Contextual Info: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection

SC11024

Abstract: 11024C 2764 z SCI1006
Contextual Info: V SIERRA SEMICONDUCTOR SC11024 2400 Bit Per Second Modem Analog Peripheral □ Conforms to CCITT V.22 bis, V.22, V.21, and Bell 212A and 103 standards □ Single 5 V supply with 10 mW power dow n mode □ A nalog, digital, and rem ote digital loopback □ Integrated DTM F/G uard Tone

C8050

Abstract: AB32 AB34 TMS320C80
Contextual Info: TMS320C80 Digital Signal Processor Data Sheet 1997 Digital Signal Processing Solutions Printed in U.S.A., October 1997 SPRS023B Book Type Data Sheet TMS320C80 DSP 1997 TMS320C80 DIGITAL SIGNAL PROCESSOR SPRS023B – JULY 1994 – REVISED OCTOBER 1997 D D D

Contextual Info: 5ME D TOSHIBA UC/UP T O S H IB A • T 0 c1724tî a D S ^ Ì UNDER DEVELOPMENT h2b « T 0 S 3 TMP90CK42 CMOS 8-BIT MICROCONTROLLERS "T -4 M 9 -< 2 > g TMP90CK42F 1. OVERVIEW AND FEATURES The TM P90CK42F is a n advanced function, highly integrated 8-bit microcontroller

K1B5616BBM

Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
Contextual Info: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

T112-16

Abstract: Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog
Contextual Info: Di vorliegenden Datenblätter dienen nur sur- Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente ©ingestuften Sortimente© Aus den Datenblättern können keine Liefer- oder ProduktVer­ bindlichkeiten abgeleitet werden*

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

N25Q128A13ESE40

Abstract: n25q128a13 N25Q128A13E N25Q128A13E1240 SO8W Package N25Q128A13ESF40 n25q128a N25Q128
Contextual Info: 128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A13E1241x, N25Q128A13E1240x, N25Q128A13ESE40x, N25Q128A13ESF40x, N25Q128A13EF840x, N25Q128A13EF740x Features • • • • • •

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

N25Q128A13ESE40

Abstract: DQ03-0 XIP2 N25Q128A13ESE n25q128a13 N25Q128A N25Q128A13EF7
Contextual Info: 128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A13E1241x, N25Q128A13E1240x, N25Q128A13ESE40x, N25Q128A13ESF40x, N25Q128A13EF840x, N25Q128A13EF740x Features • • • • • •

n25q64

Abstract: N25Q064A11ESE40 N25Q064 SOP package tray SOP2-16
Contextual Info: 64Mb, 1.8V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q064A11E124xx, N25Q064A11ESE40x, N25Q064A11ESF40x, N25Q064A11EF840x, N25Q064A11EF640x Features • • • • • • • • •

5016 SBO

Abstract: uPD75P316BKK-T uPD75308 uPD75316B uPD75P316B uPD75P316BGC-3B9 uPD75P316BGK-BE9
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

uPD75P336GK-BE9

Abstract: P30-P33 uPD75336 uPD75P336 uPD75P336GC-3B9 75336GC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

8082d

Abstract: UP 5035 LCD METER 8082D ic 75306B 75308B uPD75304B uPD75306B uPD75308 uPD75308B uPD75P308
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

6e5c

Abstract: cha 0438 044c 809D 8085 PWM 6E-15 pwm Sine wave generation microcontroller HC12 8085 ASM to add two 8-bit number counter cd 4026 8097 microcontroller
Contextual Info: Order this document by AN1771/D Motorola Semiconductor Application Note AN1771 Precision Sine-Wave Tone Synthesis Using 8-Bit MCUs By Joe Haas TSG Body Electronics and Occupant Safety Division Austin, Texas Introduction The pervasive nature of the modern microcontroller MCU has resulted

Contextual Info: Preliminary UtRAM K1B1616B2B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: /T 7 SCS-THOMSON * 7 M , « IM ilL Ë O T IM O S T V 0 1 1 7 A PAL/NTSC DIGITAL ENCODER • NTSC-M, PAL-M, PAL-B, D, G, H, I, PAL-N EASILY PROGRAMMABLE VIDEO OUTPUTS ■ U/V AND Q/l MATRIXING FOR RESPEC­ TIVELY PAL AND NTSC ENCODING ■ DIGITAL FRAME SYNC INPUT/OUTPUT

Contextual Info: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: K1C6416B2D UtRAM2 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

15Z1

Abstract: motor jun tuo 2T825 LM 3177 switching reg stepping motor EM 58b d70433gd d70433 uPD70433 PD70433 TFK 601
Contextual Info: DATA SHEET N E MOS INTEGRATED CIRCUIT C ¿ ¿ P D 7 4 3 3 V55PI 16-BIT MICROPROCESSOR DESCRIPTION The ¿iPD70433 V55P0 is a m icroprocessor in which a 16-bit CPU, RAM, serial interface, parallel interface, A/D converter, tim ers; DMA controller, interrupt controller, etc., are integrated

Chips and Technologies F840

Abstract: b1115 d6160
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TN-12-24

Abstract: SO8w
Contextual Info: 32Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q032A Features • • • • • • • • • • • • Write protection – Software write protection applicable to every 64KB sector via volatile lock bit

N25Q064

Abstract: n25q64 N25Q064a n25q
Contextual Info: 64Mb, 1.8V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q064A Features • • • • • • • • • • • • • Write protection – Software write protection applicable to every