transistor d261
Abstract: D255
Contextual Info: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B5616BBM
Abstract: K1B2816B2A K1B5616B2M K1B5616BAM
Contextual Info: Mode, Status & current during Power Up This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD
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k1b5616b2mk1b5616bamk1b5616bbmk1b2816b2a+3k1b2816baak1b2816bba200us
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UtRAM
Abstract: K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H
Contextual Info: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA - K1B6416B6C, K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD
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k1b5616b2mk1b5616bamk1b5616bbmk1b2816b2a+7k1b2816baak1b2816bbak1b6416b6ck1b3216bdd5555hutram0000h
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Contextual Info: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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k1b5616bbm256mb |
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Contextual Info: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816B2A
Abstract: bba 1st K1B5616B2M K1B5616BAM K1B5616BBM K1S56161CM
Contextual Info: Technical Note on tBC This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM, K1S5616BCM, K1S56161CM - K1B2816B2A, K1B2816BAA, K1B2816BBA, K1S2816BCA, K1S28161CA June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION
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k1b5616b2mk1b5616bamk1b5616bbmk1s5616bcm+7k1s56161cmk1b2816b2ak1b2816baak1b2816bbak1s2816bcak1s28161cabba 1st
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K1B5616BBM
Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
Contextual Info: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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k1b5616ba256mbk1b5616bbmd254+4d255k1b5616bamk1b5616bam-iutram density
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