30QMB Search Results

16L88

Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
Contextual Info: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military

transistor c331

Abstract: c331 transistor C3318 C3317 C331 C3311 C331 datasheet CY7C331 20HC c331 equivalent
Contextual Info: CY7C331 Asynchronous Registered EPLD Features • Low power — 90 mA typical ICC quiescent • Twelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — 180 mA ICC maximum — UV-erasable and reprogrammable — One feedback flip-flop with input coming from the

AC-231

Contextual Info: CY7B201 PRELIMINARY s CYPRESS . r SEMICONDUCTOR Reprogrammable 128K x 8 Power-Down PROM Features Functional Description • BiFAMOS for optimum speed/ power The CY7B201 is a high-performance 1-megabit BiFAMOS PROM organized in 128 Kbytes. It is available in 32-pin,

CY7C276-25JC

Abstract: CY7C276 C2768 tCKA
Contextual Info: CY7C276 CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed for commercial and military — 25-ns access time • • • • 16-bit-wide words Three programmable chip selects Programmable output enable 44-pin PLCC and 44-pin LCC

Contextual Info: CY7B210 PRELIMINARY CYPRESS SEMICONDUCTOR Features Product Characteristics • BiFAMOS for optimum speed/ power • Highspeed — *a a = 25 ns max. commercial The CY7B210 is a high-performance 1-megabit BiFAMOS PROM organized in 64K words by 16 bits wide. It is available in

C2021 m

Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB
Contextual Info: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro­ grammability • Higb performance at quarter power

C2704

Contextual Info: Revision: Tuesday, January 5,1993 CY7C270 CYPRESS — :. SEMICONDUCTOR • 100% reprogrammable in windowed packages • TTL-compatible I/O • Capable of withstanding greater than 2001V static discharge Features • 0.8-micron CMOS for optimum speed/power

C2723

Abstract: C272-3
Contextual Info: CY7C272 PRELIMINARY = ¡ ^ 5 sr s c y p r e s s 1 SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed — 25 ns max set-up — 25 ns clock to output • 16-bit-wide words • Registered outputs • Programmable synchronous or

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

CY7C291A

Abstract: CY7C292A CY7C293A 57C29
Contextual Info: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­

al p13

Abstract: CERAMIC LEADLESS CHIP CARRIER cerdip z PACKAGE cy7c291 CY7C293AL-35PC PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC CY7C291A CY7C292A CY7C293A
Contextual Info: CY7C291A CY7C292A/CY7C293A F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­

transistor c331

Abstract: c331 transistor c331 c331 equivalent C3318 C3319 C3314 c3317 C3311 transistor c331 datasheet
Contextual Info: fax id: 6016 1CY7C331 CY7C331 Asynchronous Registered EPLD Features • Low power — 90 mA typical ICC quiescent • Twelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — 180 mA ICC maximum — UV-erasable and reprogrammable

C2752

Abstract: 20HC C275
Contextual Info: PRELIMINARY W CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed — 20 ns max set-up — 12 ns clock to output • 16-bit-wide words • Registered outputs • Three programmable input chip se­ lects • Synchronous or asynchronous chip

LC 7258

Contextual Info: CY7C276 CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed for commercial and military — 25-ns access time • • • • 16-bit-wide words Three programmable chip selects Programmable output enable 44-pin PLCC and 44-pin LCC

Contextual Info: s rs 'w CY7C332 ~ •• = Registered Combinatorial EPLD CYPRESS — SEMICONDUCTOR Features • 12 I/O macrocells each having: — Registered, latched, or transparent array input — A choice of two clock sources — Global or local output enable OE — Up to 19 product terms (PTs) per

CY7C276

Abstract: CY7C276-25 CY7C276-35 7C276
Contextual Info: CY7C276 W CYPRESS 16Kx 16 Reprogrammable PROM Functional Description T he CY7C276 allows the user to indepen­ dently program the polarity of each chip select CS2- C S 0 . This provides on-chip decoding o f u p to eight banks o f PR O M . T he polarity of the asynchronous output

c331 equivalent

Abstract: C3317 c331-12 c3311 192x pin diagram c331
Contextual Info: CY7C331 Asynchronous Registered EPLD • Low power — 90 mA typical ICC quiescent Features • Twelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — 180 mA ICC maximum — UV-erasable and reprogrammable — One feedback flip-flop with input coming from the I/O