Diode 30D2
Abstract: 30D2 30d2 diode
Contextual Info: ｓ DIODE 30D2 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D2 VRRM
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diode 30d230d230d2 diode |
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30D2 diode
Abstract: 30D4 diode 30D2 30D1 diode
Contextual Info: ｓ DIODE 30D2 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D2 VRRM
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30d1/30d2/30d430d2 diode30d4 diode30d2+130d1 diode
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S613
Contextual Info: SILICON RECTIFIER DIODE 3A/100— 400V 30D1 30D2 30D4 FEATURES ° Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability Approx. Net Weight: 1.24 Grams MAXIMUM RATINGS \ type Voltage Rating 30D 1 30 D 2 30 D 4 Unit Symbol\^ Repetitive Peak
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a/100--s613 |
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Contextual Info: 30D1 30D2 30D4 3 A /10 0 ~ 4 0 0 V SILICON RECTIFIER DIODE FEATURES 5.8 .23 DIA » Low Forward Voltage Drop Low Reverse Leakage Current 1.5(.059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)
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30D1 diode
Abstract: 30D4 diode 30D1 30D2 30D4
Contextual Info: 30 D 1 30D2 30D4 3 A /10 0 ~ 40 0 V SILICON RECTIFIER DIODE FEA TURES 5.8 .23 DIA • Low Forward Voltage Drop - t o Low Reverse Leakage Current 1.5C059) DIA 1.3C051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)
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a/1003c051bbl512330d1 diode+430d4 diode30d130d230d4
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30D1 diode
Abstract: 30d1
Contextual Info: ｓ DIODE 30D1 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D1 VRRM
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30d1/30d2/30d430d1 diode30d1 |
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30D4 diode
Abstract: 30D1 diode 30d1 30d2 diode
Contextual Info: ｓ DIODE 30D4 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D4 VRRM
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30d1/30d2/30d430d4 diode30d1 diode30d1+130d2 diode
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30D1 diode
Abstract: 30D2 diode 30D2 30D4 diode
Contextual Info: Type：30D2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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type30d230d1/30d2/30d430d1 diode30d2 diode+230d230d4 diode
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30D1 diode
Abstract: diode 30D1 30D1 30D4 diode
Contextual Info: Type：30D1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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type30d130d1/30d2/30d430d1 diodediode 30d1+230d130d4 diode
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30D4 diode
Abstract: 30D1 diode
Contextual Info: Type：30D4 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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type30d430d1/30d2/30d430d4 diode30d1 diode |
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30d2
Contextual Info: Type：30D2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1n58171n58181m5819mbr150+14mbr160mbr190mbr110011dq0311dq04motorola diode cross referencereplacement uf5402ir 30d1diode ir 30d110df2 "cross reference1n4007 "direct replacementdiode ru4air 10d41n5818 "direct replacement
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18b2 diode
Abstract: BA41-00671A 30B4 DIODE 20B2 diode 5.1B3 B20 C875 B2 CIS10J270NC ICS951413CGLFT ATI IXP450 38b2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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533/667mhzrc410mdsb450ba41-00659a+15ba41-00671arc410md/rc410mesheet18sheet19018nf022nf18b2 diode30b4diode 20b2diode 5.1b3b20 c875 b2cis10j270ncics951413cglftati ixp45038b2
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DIODE 20B2
Abstract: CIS10J270NC ELM7S08WS BA41-0071 D5092 28B3 KBC3_SUSPWR RS600ME 218s6ecla21fg K45 S2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D Table of Contents FIRENZE2-R Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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533/667mhzrs600mesb600ba41-00714a+15ba41-00715a022nf027nf047nf0033nf018nfdiode 20b2cis10j270ncelm7s08wsba41-0071d509228b3kbc3_suspwr218s6ecla21fgk45 s2
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schematic diagram hdmi to rca
Abstract: GFX SE DIODE LE88CLPM NH82801HEM TP16355 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 f8 vga nb8p BA41-00745A
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D MILAN CPU : Chip Set : Remarks :
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ba41-00745asw501a3212elh/hed55xxu12100nf+12mt504tp17294tp17297schematic diagram hdmi to rcagfx se diodele88clpmnh82801hemtp16355ras 0510 sun holdsun hold ras 0510sun hold, ras 0510f8 vga nb8p
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RAS 0510 SUN HOLD
Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :
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ba41-xxxxxshep18050tp18051tp18052+16tp18164tp18170tp18172tp18178tp18183tp18187ras 0510 sun holdsun hold ras 0510sun hold, ras 0510nh82801hbmbd3 c531 diodeschematic diagram hdmi to rcale88clpmu519-120b3 diodeschematic diagram crt tv samsung
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ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom
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yonah667sheet18sheet19sheet20+16sheet24sheet25sheet29sheet30sheet32sheet33st t4 d560st d560 t4st 1803 dhib-566u574j551246d1ba09-00009asamsung gddr354b4
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54B2
Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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rc410mdsb450ba41-00615asheet18+15sheet19sheet20tp682tp685tp68654b2hh-1m1608-600jt20b3 diodetp807tp889hh-1m1608rc410mir 30d1 7etp828t9504
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C547 c
Abstract: BA41-00811A BA41-00791A R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS
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ba41-00791aba41-00792aba41-00811a800mhz+14rs600mesb6000033nf018nf022nf027nfc547 cr7790samsung praha sri rev 1_0keyboard and touchpad schematicap4435gmsocket am2smd diode code f4521ring
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BA41-00791A
Abstract: D51233 218S6ECLA21FG BA41-00811A R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS
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800mhzrs600mesb600ba41-00791a+13ba41-00792aba41-00811a022nf027nf047nf0033nfd51233218s6ecla21fgr7790ap680agmsamsung praha sri rev 1_0hdr-10p-1r-smd88e8039
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EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
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pbyr3045wtbyd73dctb34mbyd73g+14sb1035pbyr10401n5059sb1040equivalent byd33d1n5062 equivalentsuf5402diode cross reference bys21-45bys21-451n4007 general instrumentsby255 ittda3/10001n6644fr207 equivalent
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OZ960
Abstract: zener diode 7A3 inverter 16b2 zener diode zener 15B2 diode 21D8 10 C4237 54b6 diode 21D8 zener 9A2 11b3 DIODE ZENER
Contextual Info: CR-1 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. PAGE D C 4,5 6,7 8 9 MPC7450 MAXBUS CPU SPEED & CONFIG OPTIONS BOOTBANGER CPU LA CONNECTORS, ESP, CPU BYPASS
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mpc7450oz960zener diode 7a3inverter 16b2 zener diode+7zener 15b2diode 21d8 10c423754b6diode 21d8zener 9a211b3 diode zener
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AES2501
Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :
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controllerp1311tp1312tp1313tp1314+16tp1251tp1252tp1253tp1254tp1255tp1256aes2501ics954305tp960c703 diodetp1332vdd3310tp95033b3 diodedebug32block diagram of intel 8254 chip
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55b1 SMD
Abstract: 55B3 56B3 AM3 1A 12B nvidia NV43 audio woofer TP730 k4d553235f-vc2a smd code capacitor c435 S3F944
Contextual Info: 4 3 SAMSUNG PROPRIETARY 2 1 THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D CICHLID II Sheet 1. COVER Sheet 2 - 5. DIAGRAM Block/Power & ANNOTATIONS
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dothan533ba41-00489aba41-00537asheet16+15sheet17sheet18tp722tp717tp98955b1 smd55b356b3am3 1a 12bnvidia nv43audio woofertp730k4d553235f-vc2asmd code capacitor c435s3f944
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