300NS Search Results

JANTXV2N3749

Abstract: LM 3041
Contextual Info: P O W F P T R A N Ç R T O P Ç r ; / îw rî !?« Ja n , j a n t x , & j a n t x v 2N2880 JAN- JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN FEATURES • Meets MIL-S-19500/315 • Collector-Base Voltage: 110V • Fast Switching: tr t, = 300nSec max • Low Saturation Voltage: 0.25V max @ 1A

sec c 2335

Abstract: ic 74126 347 htl AM6070 AM6070DC Voice encryption AM2502 74375
Contextual Info: Am6070 C o m pa n d ing D-to-A Converter for C o n tro l S y s t e m s Distinctive Characteristics • Tested to /¿-255 com panding law • Absolute accuracy specified - includes all errors over tem perature range • Settling tim e 300ns typical • Ideal for m ultiplexed PCM , audio, and 8-bit ¡¿-P

AM9101

Abstract: P2101 am2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C
Contextual Info: Am9101/Am91L01/Am2101 FAMILY 256x4 Static R /W Random A cce ss Memories PART NUMBER Am2101 Am2101-2 Am 9l01 A Am91 L01A Am2101 -1 Am 9101B Am 91L01ß Am9101C Am91 L01C Am 9101D A CCESS TIME 1000ns 650ns 500ns 400ns 300ns 250ns D IS T IN C T IV E C H A R A C T E R I S T I C S

23c128

Contextual Info: HUALON MICROELECTRONICS mm E4E D • 45^8041 000004^ t. HM23C128/A 16K X 8 MASK ROM Features * * * * * * * * EPROM pin compatible. 16,384 x 8 bit organization. Single +5 Volt Supply. Access Time -200/300ns Max. Totally static operation. Completely TTL compatible.

Contextual Info: HUALON MICROELECTRONICS m#r"i 4STSD41 D000D47 2 • ~T~~Li 54 E D HM23C33 4 K X 8 M ASK ROM iijt,isSii Features * * * * * * * * Access time 200/300ns Max. Single +5V power supply. TTL compatible inputs and outputs. Three-state outputs. Pin compatible with 2732 EPROM.

Contextual Info: HUALON MICROELECTRONICS E4E D MSTflOMl 000004b □ • HM23C32 4K x 8 MASK ROM : !: a Features * * * * * * * * Access time 200/300ns Max. Single +5V power supply. TTL compatible inputs and outputs. Three-state outputs. Pin compatible with 2532 EPROM. Two programmable chip selects for output control,

Contextual Info: HUALON MICROELECTRONICS m ir i 24E D • 45^8041 □□□0046 4 ■ -jg-j9 HM23C66/A M*=S=m 8K x 8 MASK ROM Features * * * * * * * * 2,764 EPROM pin compatible. 8,192 x 8 bit organization. Single +5 Volt Supply. Access Time -200/300ns Max. Totally static operation.

welding inverter 100A

Abstract: E76102 TERMINAL M5 FRD100CA120 inverter welding dc inverter welding FDS100CA100 FRD100CA100 welding inverter dc to ac IF100A-di
Contextual Info: DIODE MODULE F.R.D. FRD100CA100/120 UL;E76102 M FRD100CA is a high speed dual diode module designed for high power switching application. FRD100CA is suitable for high frequency application requiring low loss and high speed control. High Speed trr 300ns IF AV 100A each device

Contextual Info: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES  Read Access Times of 125, 140, 150, 200, 250, 300ns  Page Write Cycle Time 10ms Max.  JEDEC Approved Packages  Data Polling for End of Write Detection  Hardware and Software Data Protection

Contextual Info: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volt POWER 200 mW 0.006 0.15 MIN. FEATURES 0.120(3.04) • High reverse breakdown voltage (200V min) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)

nec 2716 eprom

Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
Contextual Info: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply

Contextual Info: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR

Contextual Info: WPE128K8-XXX I/VHITE / M I C R O E L E C T R O N I C S 128Kx8 PLASTIC PLUS EEPROM ADVANCED* FEATURES • Burn-in and Temperature Cycling Available ■ Read Access Times of 150, 200, 250 and 300nS ■ Write Endurance 10,000 Cycles ■ Data Retention at 25°C, 10 Years

32N12

Abstract: 32N120P
Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 21A Ω 280mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C

XL2804A-250

Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
Contextual Info: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation

DFF50B12

Abstract: DFF20B12 DFD05TR DFG1C8 DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFF50B
Contextual Info: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns

SHA-2A

Abstract: AC1035 Circuit switch control unity infinite sample&hold sha2a
Contextual Info: ANALOG ► DEVICES FEATURES ±10V Range 10ns Aperture Delay %ns Aperture Jitter 300ns Settling Time 0.01% Linearity Error Complete with Input Buffer Very High Speed 12 Bit Sample-and-Hold Amplifier SPECIFICATIONS typical +25°Canti il5V dc unless othtrwis* noted

WME128K8-XXX

Contextual Info: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP

ram 8108

Abstract: 8108-5CD EMM 8108
Contextual Info: SEMI 8108 300NSEC, STATIC, T TL IN /O U T1024 X 8 N-MOS RAM SEMI 8108 500NSEC, STATIC, TTL IN /O U T 1024 X 8 N-MOS RAM FE A T U R E S G E N E R A L D E S C R IP TIO N • 1024 w o rd s X 8 bits EM M S E M I'S 8 1 0 8 is a 8 1 9 2 -b it sta tic R A M , ■

R09128

Abstract: R09128B
Contextual Info: »I N i K A l IN S I K U M l N I R09128B/C/D PRELIMINARY INFORMATION 131,072 Bit Static Read Only Memory READ ONLY M EM O R Y I FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 16,384 x 8 Organization Single + 5 Volt S upply 450ns Max Access Tim e: R09128B 300ns Max Access Time: R09128C

CMOS+4068

Contextual Info: ITTELEDi'NE PHILBRICK 4068 Monolithic 12 Bit, High Speed D/A Converter The 4068 is a monolithic, current-output 12 bit D/A con­ verter that combines high speed settling and true 12 bit performance on a single chip. A full 5mA output step settles to ±0.01%FSR ± V2 LSB in 300nsec typical,

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: FRD100CA100/120 DIODE MODULE f.r.d UL;E76102(M) FRD1OOCA is a high speed dual diode module designed for high power switching application. FRD 10OCA is suitable for high frequency application requiring low loss and high speed control. • High Speed tr r S 300ns