IXFL32N120P Search Results

IXFL32N120P Datasheets (1)

Filter by Manufacturer

IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFL32N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 24A I5-PAK	Original	PDF		5

IXFL32N120P Price and Stock

Filter by Manufacturer

Select Manufacturer


IXYS Corporation IXFL32N120P Trans MOSFET N-CH Si 1.2KV 24A 3-Pin(3+Tab) ISOPLUS I5-PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFL32N120P		25		3	1 - 10 $33.87 100 $33.87 1000 $33.87 10000 $33.87	Buy Now
Mouser Electronics	IXFL32N120P					1 - 10 - 100 - 1000 $56.96 10000 $56.96	Get Quote
TTI	IXFL32N120P	Tube			300	1 - 10 - 100 - 1000 $56.96 10000 $56.96	Buy Now
TME	IXFL32N120P		25		1	1 $23.37 10 $23.37 100 $23.37 1000 $23.37 10000 $23.37	Buy Now
Littelfuse Inc IXFL32N120P Mosfet, N-Ch, 1.2Kv, 24A, Isoplus I5-Pak; \|Littelfuse IXFL32N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFL32N120P	Bulk			1	1 $90.63 10 $90.63 100 $90.63 1000 $90.63 10000 $90.63	Buy Now
	IXFL32N120P	Bulk			300	1 - 10 - 100 - 1000 $55.56 10000 $52.09	Buy Now
RS	IXFL32N120P	Bulk		8 Weeks	25	1 - 10 - 100 $79.58 1000 $79.58 10000 $79.58	Get Quote
Onlinecomponents.com	IXFL32N120P					1 - 10 - 100 $124.07 1000 $42.27 10000 $42.27	Buy Now

IXFL32N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
32N12 Abstract: 32N120P Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions	Original	ixfl32n120p 300ns 100ms 32n120p +21-22-10-c 32n12	PDF
Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	ixfl32n120p 300ns 338b2	PDF
123B16 Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings	Original	ixfl32n120p 300ns 338b2 123b16	PDF
Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL32N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfl32n120p 300ns 100ms 32n120p +11-22-10-c	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF