3-347 TRANSISTOR Search Results

zth 347

Abstract: BUZ347
Contextual Info: BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 347 50 V 45 A 0.03 Ω TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol

Contextual Info: Microwave Transistors CONTENTS Page INDEX 3 SELECTION GUIDE 7 MARKING CODES 11 GENERAL 15 DEVICE DATA in alphanumeric sequence 29 PACKAGE OUTLINES 347 DATA HANDBOOK SYSTEM 365

2N6119

Abstract: Unitrode Semiconductor UNITRODE U-66 unijunction application note
Contextual Info: MICROSENI CORP/ WATERTOWN p jjjg SDE » • ^347^3 GG1253b 373 M U N I T 2N6119-2N6120 Planar, TO-18, Hermetic FEATURES • Hermetically Sealed TO-18 Metal Can • Programmable Eta, R6B, lPand lv • Maximum Peak Point Current: 150nA • Minimum Valley Current to 1,5mA

U2T205

Contextual Info: MICROSEMI CORP/ l i lATERTOUN SGE ] ^347^3 DD1BSD3 . POWER DÂR LI NGt ON S 327 M UNIT U2T10l U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN O FE A TU R E S • • • • • DESCRIPTION High Current Gain: up to 2QOO min @ ic = 5A Low Saturation Voltage: as low as 1.5V max @ lc = 5A

SD 347 transistor

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C

IR4060

Abstract: BUZ50 C67078-A1307-A4
Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR

Contextual Info: I Orderingnumber: E.N 1637B _ 2SC3638 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.

KSR1208

Abstract: KSR2208
Contextual Info: SAM SU N G SE M IC O N D U C T O R IN C ''F & . / j lM E D KSR1208 | 7^4142 Q 0 07 077 4 | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e sisto r Built In TO-82S • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=47Ki), R,=22KI7)

Contextual Info: Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BC857BS PINNING • Low collector capacitance PIN • Low collector-emitter saturation voltage 1,4 emitter TR1; TR2 • Closely matched current gain 2, 5 base TR1: TR2

Contextual Info: KSD1413 NPN SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -22 0 F • H igh DC C urrent G ain • Low C ollector E m itter Saturation V oltag e • c o m p le m e n t to K SB 1023 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit

CS5170

Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Contextual Info: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .

Contextual Info: Product specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PINNING - SOT89 FEATUR ES • Low drain-source on-state resistance PIN • Direct interface to C-MOS, TTL, etc. 1 2 3 • High-speed switching • No secondary breakdown.

RF Power

Abstract: "RF Power" T092
Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) BVcbo BVceo 36 (CES) 18 BVebo 4 hFE 10 Min 175 — Case Style Diag. No. Maximum Collector

uptb540

Contextual Info: niC R O S E N I CORP/ Ü IA TE R TOtilN S DE D • T3M7Tti3 0012513 27b ■ U N I T POWER TRANSISTORS UPTB520 UPTB530 UPTB540 UPTB550 0.1 Amp, 500V, Planar NPN, Plastic 7 FEATURES ' • Designed for High Speed Switching Applications • Col lector-Emitter Voltage: up to 500V

TRANSISTOR BO 346

Contextual Info: SGS-THOMSON iWIOTOiOtBS BUL410 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS . VERY HIGH SWITCHING SPEED:

BUZ 349 mosfets

Contextual Info: Standard Power MOSFETs BUZ 76 A File No. 2265 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.6 A, 400 V •"D SIonl = 2.5 £1 N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond s w itching speeds m Linear transfer characteristics

Contextual Info: SIEMENS SFH636 HIGH SPEED 5.3 kV OPTOCOUPLER Preliminary Data Sheet FEATURES • Package Dimensions in Inches mm High Speed Optocoupler without Base Connection Pin One ID. i3i f2i rîi Integrated Detector with Photodiode and Transistor High Data Transmission Rate: 1 MBit/s

UPA827TF

Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T

MOS 6509

Abstract: L47C L23C F 2452 mosfet
Contextual Info: UNITRODE CORP ^ 9347963 DE | cl3 l47c]t.3 □ □ ID flT 'l D U N ITRO DE CORP 92D 10899 UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATU RES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

tektronix p6019

Abstract: 17344 rca RCA-TIP125 equivalent of TIP122 RCA Solid State amplifier TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT p6019 TIP127 equivalent TIP120 TIP122
Contextual Info: QÏ 3875081 G E SOL ID dF | STATE Darlínglon Power Translstors 3fl7S0ñl 0D17342 0 |~~ 01E 17342 TIP125, TIP126, TIP127 File Number 997 8-A m pere P-N-P Darlington Power Transistors - 6 0 , - 8 0 , and - 1 0 0 Volts, 6 5 Watts

Contextual Info: SN74CBTS1G384 SINGLE FET BUS SWITCH SCDS067A – JULY 1998 – REVISED OCTOBER 1998 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Control Input Levels D Packaged in Plastic Small-Outline DBV OR DCK PACKAGE TOP VIEW A B GND Transistor (DBV, DCK) Packages

Contextual Info: SN74CBT1G384 SINGLE FET BUS SWITCH SCDS065A – JULY 1998 – REVISED OCTOBER 1998 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Control Input Levels D Packaged in Plastic Small-Outline DBV OR DCK PACKAGE TOP VIEW A B GND Transistor (DBV, DCK) Packages

Contextual Info: MMBT3906E PNP General Purpose Transistor 3 1 The MMBT3906E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package.

D934

Abstract: Z8.2 bd938
Contextual Info: BD934; 936 BD938; 940 BD942 PH IL IP S INTERNATIONAL SbE D • 7110fl2b 0G43GSfl TDD « P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television am plifier circuits where high peak powers can occur.