UPB2010B Search Results

UPB2010B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPB2010B		Cree	10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor	Original	PDF	130.79KB	8

UPB2010B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J645 Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor Contextual Info: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,	Original	2010B UPB2010B 30dBc 130mA 100oC 175oC J645 J626 transistor J626 ultrarf UPB2010B J626 Transistor	PDF

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J645

Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Contextual Info: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,

Original

2010B UPB2010B 30dBc 130mA 100oC 175oC J645 J626 transistor J626 ultrarf UPB2010B J626 Transistor

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