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UPB2010B Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPB2010B		Cree	10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor	Original	PDF	130.79KB	8

UPB2010B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J645 Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor Contextual Info: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,	Original	2010b upb2010b 30dbc 130ma +7100oc 175oc j645 j626 transistor j626 ultrarf j626 transistor	PDF

Catalog Datasheet

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J645

Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Contextual Info: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,

Original

2010b upb2010b 30dbc 130ma +7

PDF