U2T101
Abstract: U2T105 U2T201 U2T205
Contextual Info: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER DARLINGTONS U2T101 U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN FEATURES • High Current Gain: up to 2000 min @ lc = 5A • Low Saturation Voltage: as low as 1.5V max @ lc = 5A
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TRANSISTOR u2t101
Abstract: U2T201 2T201 U2T105 2T205 U2T101 U2T205 R82E RG1E
Contextual Info: POWER DARLINGTONS U2T101 U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN o CO LLECT O R FEATURES • H igh C urrent Gain: up to 2000 m in @ lc = 5A • Low S a tu ra tion Voltage: as low as 1.5V max @ l c = 5A • High Voltage: up to 150V m in VCER • M o n o lith ic Design In co rp o ra tin g M u ltip le -E m itte r T e chniques
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u2t101u2t105u2t201u2t205+6-u2t105transistor u2t1012t2012t205r82erg1e
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74114
Abstract: TRANSISTOR A64 U2T205 U2T101 TRANSISTOR u2t101 U2T201 U2T105 F018
Contextual Info: U2T101 U2T105 U2T201 U2T205 POWER DARLINGTONS 10 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • U nitrode N PN D arlingtons co n s is t o f a two tra n sisto r c irc u it on a s in g le m o n olith ic plan ar ch ip. H igh Current Gain: up to 2000 m in @ tc = 5A
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u2t101u2t105u2t201u2t205+6/-33-h20-c/w74114transistor a64transistor u2t101f018
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U2T105
Abstract: u2t205
Contextual Info: U2T101 U2T105 U2T201 U2T205 POWER DARLINGTONS 10 Amp, 150V, Planar NPN o FEATURES • H igh C urrent Gain: up to 2000 m in @ lc = 5A • Low S atu ra tion Voltage: as low as 1.5V max @ lc =r 5A • H igh Voltage; up to 150V m in VCER • M o n o lith ic Design In co rp o ra tin g M u ltip le -E m itte r Techniques
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U2T205
Contextual Info: MICROSEMI CORP/ l i lATERTOUN SGE ] ^347^3 DD1BSD3 . POWER DÂR LI NGt ON S 327 M UNIT U2T10l U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN O FE A TU R E S • • • • • DESCRIPTION High Current Gain: up to 2QOO min @ ic = 5A Low Saturation Voltage: as low as 1.5V max @ lc = 5A
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u2t10lu2t105u2t201u2t205+1u2t101
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MJE1100
Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70
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mj4200mj4000mjd6039mjd6039-1+82sd15202sd14142sd1933mje1100mj4001sdn201bd263bmotorola transistors mje1102
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b0333
Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J
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u2t2012n63522s011692s01315+14sgs121tip121tip621mje1102b0333box53b044e3bow93bb0647box67abot63abot65a2n605bb0699
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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comp27-1296triacs bt 804 600vur7201n4465+7ao110diode 1n5392n3750unitrode discrete databook2n6138cm104unitrode 679 bridge rectifier
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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B0679
Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52
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bst52bsp52mpsa282s01698+122s016972s01699bc879b06792n6852som3305solitron transistorsu2t1012n685diode 6aabss52b0879
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