2SK655 Search Results

Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2

Contextual Info: 2SK655 Silicon MOS FETs Small Signal 2SK655 Silicon N-Channel MOS Unit : mm For switching 3.0±0.2 4.0±0.2 Radial taping possible marking 1 2 3 2.0±0.2 ● 0.7±0.1 High-speed switching +0.2 0.45–0.1 ● 15.6±0.5 • Features ■ Absolute Maximum Ratings (Ta = 25˚C)

2SK655

Abstract: SC-72
Contextual Info: Silicon MOS FETs Small Signal 2SK655 Silicon N-Channel MOS FET For switching unit: mm 4.0±0.2 3.0±0.2 • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature

MA408

Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 M Di ain sc te on na tin nc ue e/ d • High-speed switching • Allowing to supply with the radial taping

2SK0655

Abstract: 2SK655
Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si

2SK0655

Abstract: 2SK655
Contextual Info: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 0.45+0.20 –0.10 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage

2SK0655

Abstract: 2SK655 SC-72
Contextual Info: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm 4.0±0.2 3.0±0.2 For switching • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature

2SK0655

Abstract: 2SK655
Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 • High-speed switching • Allowing to supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C

2SK653

Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Contextual Info: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

2sk to-92

Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)