2SK1946 Search Results

2SK1946-01MR

Contextual Info: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers

K1946

Abstract: A2302 2SK1946-01MR
Contextual Info: 2SK1946-01 M R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-UI SERIES Outline Drawings • features • High cu rren t 4.5±0.2 • Low o n-resistance 2,7±0.2 • No secondary breakdow n • Low driving p o w e r • High fo rw a rd T ran scon d u ctan ce

2SK1946-01M

Contextual Info: 2SK1946-01M S IP M O S F U J I P O W E R N-CHANNEL SILICON POWER MOS-FET M O S -F E T FAP-III SERIES • Features Outline Drawings • High cu rren t • Low on-resistance • N o secondary b reakdow n • Low driving p o w er • High fo rw a rd T ran scon d u ctan ce

cs 740 mosfet

Abstract: GG03
Contextual Info: 2SK1946-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - III S E R I E S I Outline Drawings • F e a tu re s • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • Avalanche-proof

cs 740 mosfet

Abstract: 2SK1946-01M A2-270 mosfet 740 0312B
Contextual Info: 2SK1946-01M S IP M O S F U J I P O W E R N-CHANNEL SILICON POWER MOS-FET FAP-III SERIES • Features • • • • M O S -F E T Outline Drawings High current Low on-resistance No secondary breakdown Low driving power • High forward Transconductance

2SK1946-01MR

Abstract: 2SK1946 ON60
Contextual Info: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers

K1946

Abstract: K1946 MOS_FET K1946 MOS-FET
Contextual Info: 2SK1946-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P -III S E R IE S I Outline Drawings • features • High current 10±0.5 • Low on-resistance 03.2!“ 4.540.2 2,710.2 • No secon d ary breakdow n • Lo w driving p ow er • High fo rw ard T ran sco n d u ctan ce

K1946

Abstract: tz 1290 cs 740 mosfet a2302 2SK1946-01MR
Contextual Info: 2SK1946-01 M R FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-UI SERIES Outline Drawings • features • High current 4.5±0.2 • Low on-resistance 2,7±0.2 • No secondary breakdown • Low driving power • High forward Transconductance 1 ^ Gite

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SK1083-MR

Abstract: 2SK1096-MR 2SK1946-01MR 2SK2018-01L 2SK2098-01MR 2SK2226-01L 2SK2248-01L 2SK2249-01L 2SK2516-01L 2SK2517-01L
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-III / FAP-III シリーズ（Nチャネル） F-III / FAP-III series N channel ロジックレベル駆動／アバランシェ耐量保証 Logic level drive / Avalanche rated 形 式

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R ds ON 30-150 Volts Maximum Ratinas Device Type V dss (V) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SKl387MR " IS K iW " — '2SK1B56 ; 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR

2SK1083MR

Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

TO-220F15

Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049

2SK1101-01M

Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SK1014-01

Abstract: 2SK151
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01

2SK2446-01L

Abstract: 2SK1089
Contextual Info: /\°7 -MOSFET / Power MOSFETs J U | F-lll / FAP-lll '> V - X P v -y 0 m N F - l l l > v x H J t^ S E / FAP-lll series ( N channel Logic level drive / A vara rtch e rated Id (putee) Amps, Amps. Volts Vofts 30 10 40 0.06 20 ±16 30 10 40 0.06 35 ±16 T-pack

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR

Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,

LS 2025

Contextual Info: <§ MOSFETs F-lll Series - Logic Level Operation, Low R d s ON 3 0 - 1 5 0 Volts Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR 2SK2446 L.S 2SK2050