2SK3273 Search Results

2SK3273-01MR

Contextual Info: 2SK3273-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±70A 70W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

2SK3273-01MR

Contextual Info: 2SK3273-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±70A 70W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

100UH

Abstract: 2SK3273 2SK3273-01MR
Contextual Info: 2SK3273-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±70A 70W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

POWER MOSFET

Abstract: mosfet power amplifier 2SK3273-01MR mosfet low vgs
Contextual Info: 2SK3273-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters

70A diode

Contextual Info: This m a te ria l and the in fo rm a tio n herein is the property o f Fuji Electric Co.,Ltd. They shall be neither re p rod u ced , copied, le nt, or disclosed in any way w h a tso e ve r for the use of any third party nor used for the m a n u fa ctu rin g purposes w ith o u t

Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type Volts Amps. 5x2 Amps. RDS on Max. ＊1 Ohms (Ω) 7 60

2sk3273

Abstract: 2SK3273-01MR
Contextual Info: DATE CHECKED NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

2SK1969

Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Contextual Info: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2SK2687-01

Abstract: 2SK2688-01L 2SK2689-01MR 2SK2806-01 2SK2807-01L 2SK2808-01MR 2SK2890-01MR 2SK2892-01R 2SK3363-01 F7007N
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01

Contextual Info: H04-004-05 T h is Fuji m ate ria l Electric and th e in fo rm a tio n C o.,Ltd. T h e y shall lent, or d is c lo s e d third party nor In used any w a y for the h e re in is t h e p roperty of be n e i t h e r r e p r o d u c e d , c o p ie d , w h a ts o e v e r for the